Bio‐Compatible Flexible Memristive Devices Enabled by BNNT/MWCNT–ZnO Quantum Dot Hybrid Percolation Networks

ABSTRACT Flexible, transparent resistive random‐access memory (ReRAM) is promising for next‐generation wearable and bio‐integrated electronics requiring low power and material safety. Here, we report a flexible and transparent ReRAM device based on a BNNT rod/MWCNT–ZnO quantum dot (QD) nanocomposite and evaluate its electrical operation under static bending, stability after low‐temperature exposure, and biocompatibility. The fabricated Al/nanocomposite/ITO/PET device exhibited approximately 63% optical transmittance in the visible region and maintained resistive switching under a 3 cm static bending radius. It demonstrated nonvolatile memory characteristics, including an ON/OFF current ratio over 10 3 , electrical endurance exceeding 20 000 cycles, and retention beyond 75 000 s. The memory performance remained stable at −30°C, indicating environmental robustness. Charge transport analysis revealed that switching behavior is governed by space‐charge‐limited current (SCLC) conduction at low voltages and Fowler–Nordheim tunneling at high electric fields, while the BNNT layer acts as a charge‐blocking layer to enhance retention stability. For biocompatibility, cytotoxicity testing showed cell viability satisfied ISO 10993–5, while 8‐week subcutaneous implantation revealed a transient acute inflammation that attenuated over time without necrosis. Despite non‐encapsulated conditions, explanted devices retained distinguishable resistive states, demonstrating in vivo functional stability. Overall, this nanocomposite‐based ReRAM shows potential as a memory platform for wearable and implantable bioelectronics.