Non-Idealities in Tri-Gate FinFETs: Modeling, Simulation, and Mitigation Strategies

Abstract This work presents an extensive examination of undoped Tri-Gate Fin Field-Effect Transistors (TG-FinFET), focusing on their analytical modeling of surface potential, electric field and threshold voltage. This model is taking into account the consequence of localized interface charges, both positive and negative, that are carefully placed near the drain region. These charges are neglected in traditional modeling methodologies, are recognized to have a major influence on device electrostatics, especially at nanoscale levels where charge perturbations can markedly affect carrier transport and threshold properties. It is also examined how the drain-proximal interface charge (positive or negative) and high-k dielectric materials impact these parameters. Drawing insights from recent research, model the surface potential from two-dimensional Poisson’s equation. Combine solutions of the symmetric and asymmetric double gate FinFET to attain surface potential of the TG-FinFET. Concept of inversion charge is applied in direction of compute threshold voltage. The design is analyzed under varying interface charge densities and damage lengths on the silicon substrate. All parameters for both HfO2 and SiO2 are associated with the TCAD simulation. Accuracy of the approach is established by aligning its predictions through recognized experimental findings.