Ferroelectric spintronics in van der Waals materials

Abstract Nonvolatile control of electron spin using electric polarization offers a promising route toward energy-efficient spintronic devices. Early studies of conventional ferroelectrics, from GeTe to perovskite oxides, demonstrated that polarization switching can reversibly control spin textures and spin-to-charge conversion (SCC) in nonmagnetic materials. However, practical device implementation remains limited by polarization instabilities in ultrathin ferroelectrics and the modest efficiency of SCC. Recent advances in two-dimensional (2D) van der Waals (vdW) ferroelectrics provide new opportunities to overcome these challenges. In particular, sliding ferroelectricity enables polarization switching through interlayer displacement, offering ultralow switching barriers and reduced defect propagation while preserving the in-plane conductivity required for SCC and compatibility with atomically thin devices. In this Perspective, we discuss the evolution of ferroelectric control of spin-orbit phenomena from conventional bulk materials to emerging vdW ferroelectrics, bridging recent advances in 2D ferroelectricity with the field of spintronics. We examine polarization-controlled spin-orbit responses, including Rashba-Edelstein and spin Hall effects, and show how stacking, sliding, and twist—combined with strong spin-orbit coupling and persistent spin textures—expand the design space for ferroelectric spin-orbit (FESO) devices. Finally, we highlight opportunities offered by vdW ferroelectric altermagnets and identify the materials and device challenges that will be critical for realizing practical ferroelectric spintronic architectures.