Structural, Optical, and Photoconductive Properties of Slurry-Coated Cu0.2Zn0.8S Film

Abstract In this study, a slurry-coating procedure was successfully employed to deposit a Cu0.2Zn0.8S film on glass substrates. X-ray diffraction (XRD) and Raman spectroscopy analyses confirmed the formation of a polycrystalline, phase-pure cubic structure. Scanning electron microscopy (SEM) revealed a continuous surface coverage with uniform grain agglomeration alongside the presence of thermal-stress-induced micro-cracks. From the diffuse reflectance spectrum, an optical absorption edge was observed at approximately 331 nm, corresponding to a direct optical band gap of 3.75 eV. To evaluate the material’s suitability for optoelectronic components, electrical conductivity measurements were performed using a two-probe technique under both dark and constant illumination conditions over a temperature range of 300–473 K. The film exhibited a clear semiconducting nature governed by thermal activation, displaying a steady-state photosensitivity ratio (σph/σd) of approximately 9.0. These findings demonstrate that the slurry-coated Cu0.2Zn0.8S film combines structural purity with favorable optoelectronic properties, highlighting its strong intrinsic photo-response and its potential utility as a baseline material for future photoconductive and optoelectronic applications.

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Publication Details

Journal
Physics of the Solid State
Published
2026-08-14
DOI
https://doi.org/10.1134/s1063783426600330
Primary Topic
Chalcogenide Semiconductor Thin Films
Type
article
Field-Weighted Citation Impact
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article

Structural, Optical, and Photoconductive Properties of Slurry-Coated Cu0.2Zn0.8S Film

Monika Gupta, Akansha Agrwal, Parvin Kumar, R.A. Zargar et al.
Physics of the Solid State
Chalcogenide Semiconductor Thin Films
article

Structural, Optical, and Photoconductive Properties of Slurry-Coated Cu0.2Zn0.8S Film

Monika Gupta, Akansha Agrwal, Parvin Kumar, R.A. Zargar, N. P. Yadav, D. K. Dwivedi, Pradeep Kumar, Vipin Kumar
article en

Abstract

Abstract In this study, a slurry-coating procedure was successfully employed to deposit a Cu0.2Zn0.8S film on glass substrates. X-ray diffraction (XRD) and Raman spectroscopy analyses confirmed the formation of a polycrystalline, phase-pure cubic structure. Scanning electron microscopy (SEM) revealed a continuous surface coverage with uniform grain agglomeration alongside the presence of thermal-stress-induced micro-cracks. From the diffuse reflectance spectrum, an optical absorption edge was observed at approximately 331 nm, corresponding to a direct optical band gap of 3.75 eV. To evaluate the material’s suitability for optoelectronic components, electrical conductivity measurements were performed using a two-probe technique under both dark and constant illumination conditions over a temperature range of 300–473 K. The film exhibited a clear semiconducting nature governed by thermal activation, displaying a steady-state photosensitivity ratio (σph/σd) of approximately 9.0. These findings demonstrate that the slurry-coated Cu0.2Zn0.8S film combines structural purity with favorable optoelectronic properties, highlighting its strong intrinsic photo-response and its potential utility as a baseline material for future photoconductive and optoelectronic applications.

Physics of the Solid StateVol. 68(9)
Institute of Management Technology (IN), University of Novi Sad (RS), Madan Mohan Malaviya University of Technology (IN), Hospital Terrassa (ES), Hubei Polytechnic University (CN), Guru Nanak Institutions (IN)
Openalex Percentile: Top 18%
Chalcogenide Semiconductor Thin Films
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Structural, Optical, and Photoconductive Properties of Slurry-Coated Cu0.2Zn0.8S Film — Monika Gupta, Akansha Agrwal, et al. · Physics of the Solid State (2026) | TGRS Research Map | TGRS