Photoexcitation Study on 2DEG at Double-Doped Oxide Heterointerfaces

Abstract Ever since the discovery of two-dimensional electron gas (2DEG) at transition metal oxide interface, it has been proven to be a hot research spot with extremely high theoretical and practical potential because of the rich physical phenomena and broad quantum coherence that respond to multiple external stimuli. Here, by illuminating 360 nm light (2 and 5 mW) at carefully designed Nd0.86Sr0.14Al0.86Co0.14O3/SrTiO3 (NSACO/STO) and Nd0.86Sr0.14Al0.86Fe0.14O3/SrTiO3 (NSAFO/STO) heterointerfaces, a series of phenomena, like band splitting, enhanced magnetoresistance (MR), and Rashba spin–orbit coupling (SOC), emerge and can be systematically adjusted by the light power and doping element. The study advances the understanding of optoelectronic behaviors in complex oxide heterointerfaces, as well as the insights for developing tunable quantum devices.

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Publication Details

Journal
ACS Applied Electronic Materials
Published
2026-08-14
DOI
https://doi.org/10.1021/acsaelm.6c01256
Primary Topic
Electronic and Structural Properties of Oxides
Type
article
Field-Weighted Citation Impact
0.00

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article

Photoexcitation Study on 2DEG at Double-Doped Oxide Heterointerfaces

Hang Yin, Kexin Jin, Shuanhu Wang, Jiaxin Lv
ACS Applied Electronic Materials
Electronic and Structural Properties of Oxides
article

Photoexcitation Study on 2DEG at Double-Doped Oxide Heterointerfaces

Hang Yin, Kexin Jin, Shuanhu Wang, Jiaxin Lv
article en

Abstract

Abstract Ever since the discovery of two-dimensional electron gas (2DEG) at transition metal oxide interface, it has been proven to be a hot research spot with extremely high theoretical and practical potential because of the rich physical phenomena and broad quantum coherence that respond to multiple external stimuli. Here, by illuminating 360 nm light (2 and 5 mW) at carefully designed Nd0.86Sr0.14Al0.86Co0.14O3/SrTiO3 (NSACO/STO) and Nd0.86Sr0.14Al0.86Fe0.14O3/SrTiO3 (NSAFO/STO) heterointerfaces, a series of phenomena, like band splitting, enhanced magnetoresistance (MR), and Rashba spin–orbit coupling (SOC), emerge and can be systematically adjusted by the light power and doping element. The study advances the understanding of optoelectronic behaviors in complex oxide heterointerfaces, as well as the insights for developing tunable quantum devices.

ACS Applied Electronic Materials
Northwestern Polytechnical University (CN), Northwestern Polytechnic University (US)
National Natural Science Foundation of China, Natural Science Basic Research Program of Shaanxi Province
Industry, innovation and infrastructure
Openalex Percentile: Top 21%
Electronic and Structural Properties of Oxides
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Photoexcitation Study on 2DEG at Double-Doped Oxide Heterointerfaces — Hang Yin, Kexin Jin, et al. · ACS Applied Electronic Materials (2026) | TGRS Research Map | TGRS