High-Temperature Oxidation Behavior and Oxide Layer Morphology of Silicon Carbide Surface

The oxide interface on silicon carbide is a critical microstructural feature that enhances the mechanical properties of its reinforced composites; therefore, investigating the oxidation behavior and oxide layer morphology of silicon carbide is of great significance. This work systematically elucidates the oxidation behavior and oxide layer morphology evolution of silicon carbide particles within the temperature range of 1100 to 1400 °C through quantitative analysis and visual characterization. Meanwhile, based on the measurement results of mass, particle size, and atomic ratio, three semi-quantitative estimation formulas for oxide layer thickness are derived (1.214rk, 2.226Δh, and 193pH/(213-126p), respectively), providing a reference for rapid assessment of oxide layer thickness when direct and macroscopic observation means are lacking. This work provides a reference for understanding the oxidation behavior of silicon carbide particles and for related composite material research.