Nanoscale Resistive Switching in Electrodeposited MOF Prussian Blue Analogs Driven by K-Ion Intercalation Probed by C-AFM
Abstract K-ion intercalation in Prussian blue analogues (PBAs) is a well-established charge storage mechanism in potassium-ion batteries; here, we demonstrate that this process also responsible for nanoscale resistive switching in PBA-based material. Using conductive atomic force microscopy (C-AFM), we directly visualize and electrically control reversible conductance modulation within sub-100 nm volumes, linking localized K+ redistribution to Fe2+/Fe3+ redox reconfiguration. The switching is polarity-selective, with Prussian white (PW) and Prussian blue (PB) both exhibiting unidirectional resistive switching (URS) at opposite bias polarities, consistent with oxidation- and reduction-driven transport, respectively. These processes are governed by electrically confined ion−electron coupling, where K-ion motion modulates small-polaron hopping within the PBA framework. The switching dynamics are strongly dependent on ionic mobility, with PW sustaining operation up to 200 V/s and PB up to 50 V/s, highlighting the critical role of K-ion concentration in enabling fast redox kinetics. This nanoscale switching mechanism, combined with spatial confinement below 100 nm, enables high-density device integration without interference between them. Moreover, PBAs provide a chemically versatile, earth-abundant platform with tunable ionic and electronic properties, fabricated via a single-step, aqueous, room-temperature process compatible with CMOS technology. This solution-processable approach enables low-temperature fabrication, scalability to large-area substrates, and integration into diverse device architectures. The use of simple salt precursors ensures low-cost manufacturing, while environmentally friendly synthesis and nontoxic, noncontaminating disposal enhance overall sustainability.
Authors
- Oriane de Leuze
- Michael Pohlitz (ORCID: https://orcid.org/0009-0006-8823-3360)
- Lindiomar Borges de Avila (ORCID: https://orcid.org/0000-0001-9039-2498)
- J.B. Roldán (ORCID: https://orcid.org/0000-0003-1662-6457)
- Marco Antonio Villena (ORCID: https://orcid.org/0000-0001-5547-3380)
- Eugenio Coronado (ORCID: https://orcid.org/0000-0002-1848-8791)
- B. Hackens (ORCID: https://orcid.org/0000-0001-6121-5126)
- Thomas Coppée (ORCID: https://orcid.org/0000-0002-1854-4159)
- Flavio Abreu Araujo (ORCID: https://orcid.org/0000-0001-7157-3197)
- Anatole Moureaux (ORCID: https://orcid.org/0000-0003-2969-2154)
- Christian Klaus Müller
- Ramón Torres‐Cavanillas (ORCID: https://orcid.org/0000-0002-3431-6113)
- Sofiane Arib
- Anthony Lopes Temporao
- Colin Ducarme
Institutions
- Universitat de València (ES)
- Universidad de Granada (ES)
- Westsächsische Hochschule Zwickau (DE)
- UCLouvain (BE)
Publication Details
- Journal
- ACS Applied Electronic Materials
- Published
- 2026-08-03
- DOI
- https://doi.org/10.1021/acsaelm.6c00766
- Primary Topic
- Advanced Memory and Neural Computing
- Type
- article
- Field-Weighted Citation Impact
- 0.00