Nanoscale Resistive Switching in Electrodeposited MOF Prussian Blue Analogs Driven by K-Ion Intercalation Probed by C-AFM

Abstract K-ion intercalation in Prussian blue analogues (PBAs) is a well-established charge storage mechanism in potassium-ion batteries; here, we demonstrate that this process also responsible for nanoscale resistive switching in PBA-based material. Using conductive atomic force microscopy (C-AFM), we directly visualize and electrically control reversible conductance modulation within sub-100 nm volumes, linking localized K+ redistribution to Fe2+/Fe3+ redox reconfiguration. The switching is polarity-selective, with Prussian white (PW) and Prussian blue (PB) both exhibiting unidirectional resistive switching (URS) at opposite bias polarities, consistent with oxidation- and reduction-driven transport, respectively. These processes are governed by electrically confined ion−electron coupling, where K-ion motion modulates small-polaron hopping within the PBA framework. The switching dynamics are strongly dependent on ionic mobility, with PW sustaining operation up to 200 V/s and PB up to 50 V/s, highlighting the critical role of K-ion concentration in enabling fast redox kinetics. This nanoscale switching mechanism, combined with spatial confinement below 100 nm, enables high-density device integration without interference between them. Moreover, PBAs provide a chemically versatile, earth-abundant platform with tunable ionic and electronic properties, fabricated via a single-step, aqueous, room-temperature process compatible with CMOS technology. This solution-processable approach enables low-temperature fabrication, scalability to large-area substrates, and integration into diverse device architectures. The use of simple salt precursors ensures low-cost manufacturing, while environmentally friendly synthesis and nontoxic, noncontaminating disposal enhance overall sustainability.

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Journal
ACS Applied Electronic Materials
Published
2026-08-03
DOI
https://doi.org/10.1021/acsaelm.6c00766
Primary Topic
Advanced Memory and Neural Computing
Type
article
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article

Nanoscale Resistive Switching in Electrodeposited MOF Prussian Blue Analogs Driven by K-Ion Intercalation Probed by C-AFM

Oriane de Leuze, Michael Pohlitz, Lindiomar Borges de Avila, J.B. Roldán et al.
ACS Applied Electronic Materials
Advanced Memory and Neural Computing
article

Nanoscale Resistive Switching in Electrodeposited MOF Prussian Blue Analogs Driven by K-Ion Intercalation Probed by C-AFM

Oriane de Leuze, Michael Pohlitz, Lindiomar Borges de Avila, J.B. Roldán, Marco Antonio Villena, Eugenio Coronado, B. Hackens, Thomas Coppée, Flavio Abreu Araujo, Anatole Moureaux, Christian Klaus Müller, Ramón Torres‐Cavanillas, Sofiane Arib, Anthony Lopes Temporao, Colin Ducarme
article en

Abstract

Abstract K-ion intercalation in Prussian blue analogues (PBAs) is a well-established charge storage mechanism in potassium-ion batteries; here, we demonstrate that this process also responsible for nanoscale resistive switching in PBA-based material. Using conductive atomic force microscopy (C-AFM), we directly visualize and electrically control reversible conductance modulation within sub-100 nm volumes, linking localized K+ redistribution to Fe2+/Fe3+ redox reconfiguration. The switching is polarity-selective, with Prussian white (PW) and Prussian blue (PB) both exhibiting unidirectional resistive switching (URS) at opposite bias polarities, consistent with oxidation- and reduction-driven transport, respectively. These processes are governed by electrically confined ion−electron coupling, where K-ion motion modulates small-polaron hopping within the PBA framework. The switching dynamics are strongly dependent on ionic mobility, with PW sustaining operation up to 200 V/s and PB up to 50 V/s, highlighting the critical role of K-ion concentration in enabling fast redox kinetics. This nanoscale switching mechanism, combined with spatial confinement below 100 nm, enables high-density device integration without interference between them. Moreover, PBAs provide a chemically versatile, earth-abundant platform with tunable ionic and electronic properties, fabricated via a single-step, aqueous, room-temperature process compatible with CMOS technology. This solution-processable approach enables low-temperature fabrication, scalability to large-area substrates, and integration into diverse device architectures. The use of simple salt precursors ensures low-cost manufacturing, while environmentally friendly synthesis and nontoxic, noncontaminating disposal enhance overall sustainability.

ACS Applied Electronic Materials
Universitat de València (ES), Universidad de Granada (ES), Westsächsische Hochschule Zwickau (DE), UCLouvain (BE)
Responsible consumption and production
Openalex Percentile: Top 16%
Advanced Memory and Neural Computing
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