High quantum-efficiency InGaAs/InP photodiodes heterogeneously integrated on SiN waveguides

The integration of photodiodes with optical waveguides is increasingly important for photonic integrated circuit development. We report modified uni-traveling-carrier photodiodes heterogeneously integrated onto Si3N4 optical waveguides, achieving quantum efficiencies up to 91% at 1550 nm. The combination of high quantum efficiencies and ultra-low dark currents yields high signal-to-noise ratios over a broad range of optical signal powers.