N-graphene/SiC composite obtained by microwave plasma-enhanced CVD

A composite material was obtained by growing graphene nanostructures on the surface of a porous SiC ceramic substrate under low gas pressure (~4 Torr) via plasma-enhanced chemical vapor deposition (PECVD). Microwave plasma in a hydrogen/methane mixture generates radicals that deposit onto the heated SiC surface, forming vertically oriented graphene walls firmly bonded to the substrate. The growth process is well controlled and characterized by a high growth rate of 1 μm/min. Multilayer porous graphene structures consisting of vertically aligned nanowalls with a corn-seed-like morphology were obtained. Plasma-induced nitrogen doping of the resulting composite material enhances the reactivity and electrical conductivity of the graphene layers, making the porous material a promising candidate for further processing and application as an electrode material in hybrid batteries and supercapacitors.