Temperature-dependent reaction pathways of fluorination and nitridation in native Nb oxide under NF3/H-radical exposure
Native niobium forms Nb2O5 and NbOx upon air exposure, and these suboxide components are known to introduce two-level systems that limit the performance of superconducting quantum circuits. Reliable low-temperature modification of the native oxide is, therefore, of considerable interest. In this study, we systematically investigated the temperature-dependent reactions of native Nb oxides exposed to NF3 and H radicals from 25 to 250 °C. X-ray photoelectron spectroscopy revealed three distinct regimes: fluorination at 25 °C forming NbF5- and NH4F-like species; stabilization of NbO2F and fluorine-mediated nitridation at 100–150 °C; and a mechanistic transition at 200 °C, leading to the direct nitridation of Nb–O bonds and the formation of NbON. At 250 °C, deep nitridation penetrated into the underlying Nb metal, resulting in a thick NbON layer and a loss of selectivity. These results indicate that temperatures below 200 °C allow selective fluorination and nitridation of the native oxide while suppressing excessive modification of the underlying metallic Nb. The mechanistic insights obtained here provide a basis for understanding fluorination and nitridation reactions in Nb oxide under low-temperature radical-processing environments.
Authors
- Y. Fujita (ORCID: https://orcid.org/0000-0002-1798-1066)
- Y. Urade (ORCID: https://orcid.org/0000-0002-6580-5497)
- Go Fujii (ORCID: https://orcid.org/0000-0002-8708-4176)
- Kazuhiko Endo (ORCID: https://orcid.org/0000-0002-3517-3580)
- Daisuke Ohori (ORCID: https://orcid.org/0000-0001-9351-7700)
- K. Inomata (ORCID: https://orcid.org/0000-0002-1151-4512)
- Yamato Aoyama (ORCID: https://orcid.org/0009-0000-6243-3010)
Institutions
- Tohoku University (JP)
- National Institute of Advanced Industrial Science and Technology (JP)
Publication Details
- Journal
- Journal of Vacuum Science & Technology A Vacuum Surfaces and Films
- Published
- 2026-07-30
- DOI
- https://doi.org/10.1116/6.0005517
- Primary Topic
- Semiconductor materials and devices
- Type
- article
- Field-Weighted Citation Impact
- 0.00
Funders
- New Energy and Industrial Technology Development Organization