Engineering structural discontinuity in ordered Co3O4 nanocube arrays for volatile memristive dynamics

Abstract The precise engineering of nanoscale gaps between discrete building blocks offers a direct pathway to govern charge transport physics in functional materials. Here, we demonstrate a fundamental transition from stochastic bulk conduction to reliable interface-mediated volatile switching by deliberately introducing structural discontinuity in spinel-type Co 3 O 4 nanocube (NC) arrays. While continuous oxide thin films suffer from irreversible breakdown and featureless transport, and disordered NC assemblies exhibit only leakage-like conduction, our self-assembled NC architecture enables a stable and low-power functional response. Utilizing an automated metrology framework based on the Segment Anything Model (SAM), we confirm the formation of a highly ordered, non-percolated square lattice with a narrowly distributed interparticle gap of 2.84 ± 0.64 nm across thousands of junctions. This statistically defined NC-gap-NC junction network confines the active conduction volume to nanoscale junctions, achieving an ultralow operating current of ~ 10 nA and exceptional statistical uniformity (coefficient of variation < 9%); the operating voltage is likewise set by the interparticle junction and can be brought to the ~ 1 V regime by contracting the gap through ligand exchange. Quantitative analysis identifies junction-limited, multi-regime transport across the NC-gap-NC interfaces as the dominant conduction picture, with Schottky-emission-like injection at intermediate fields and Fowler–Nordheim-type field-assisted tunneling at high fields. Furthermore, time-resolved measurements reveal dual-mode relaxation dynamics characterized by microsecond electronic detrapping and slow recovery consistent with ionic back-diffusion, which facilitate complex temporal dynamics for biomimetic signal processing. Our findings suggest that a preformed, statistically quantified nanogap network, rather than bulk percolation, can serve as a useful design principle for energy-efficient electronic primitives beyond conventional continuous media.

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Publication Details

Journal
Advanced Composites and Hybrid Materials
Published
2026-07-30
DOI
https://doi.org/10.1007/s42114-026-01993-3
Primary Topic
Advanced Memory and Neural Computing
Type
article
Field-Weighted Citation Impact
0.00

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article

Engineering structural discontinuity in ordered Co3O4 nanocube arrays for volatile memristive dynamics

Sanghan Lee, Inhyeok Oh, Donghyeon Lee, Hyeon Kim et al.
Advanced Composites and Hybrid Materials
Advanced Memory and Neural Computing
article

Engineering structural discontinuity in ordered Co3O4 nanocube arrays for volatile memristive dynamics

Sanghan Lee, Inhyeok Oh, Donghyeon Lee, Hyeon Kim, Daehyeok Kim, Myoung Hwan Oh, Minwoo Kang, Jun Beom Hwang, Seohyeon Kim, Jungdae Lee
article en

Abstract

Abstract The precise engineering of nanoscale gaps between discrete building blocks offers a direct pathway to govern charge transport physics in functional materials. Here, we demonstrate a fundamental transition from stochastic bulk conduction to reliable interface-mediated volatile switching by deliberately introducing structural discontinuity in spinel-type Co 3 O 4 nanocube (NC) arrays. While continuous oxide thin films suffer from irreversible breakdown and featureless transport, and disordered NC assemblies exhibit only leakage-like conduction, our self-assembled NC architecture enables a stable and low-power functional response. Utilizing an automated metrology framework based on the Segment Anything Model (SAM), we confirm the formation of a highly ordered, non-percolated square lattice with a narrowly distributed interparticle gap of 2.84 ± 0.64 nm across thousands of junctions. This statistically defined NC-gap-NC junction network confines the active conduction volume to nanoscale junctions, achieving an ultralow operating current of ~ 10 nA and exceptional statistical uniformity (coefficient of variation < 9%); the operating voltage is likewise set by the interparticle junction and can be brought to the ~ 1 V regime by contracting the gap through ligand exchange. Quantitative analysis identifies junction-limited, multi-regime transport across the NC-gap-NC interfaces as the dominant conduction picture, with Schottky-emission-like injection at intermediate fields and Fowler–Nordheim-type field-assisted tunneling at high fields. Furthermore, time-resolved measurements reveal dual-mode relaxation dynamics characterized by microsecond electronic detrapping and slow recovery consistent with ionic back-diffusion, which facilitate complex temporal dynamics for biomimetic signal processing. Our findings suggest that a preformed, statistically quantified nanogap network, rather than bulk percolation, can serve as a useful design principle for energy-efficient electronic primitives beyond conventional continuous media.

Advanced Composites and Hybrid Materials
Gwangju Institute of Science and Technology (KR), Korea Institute of Energy Research (KR)
National Research Foundation of Korea, Korea Institute of Energy Technology Evaluation and Planning
Affordable and clean energy
Openalex Percentile: Top 16%
Advanced Memory and Neural Computing
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