Hyperdimensional in-memory computing with analogue memristive crossbar arrays
Deploying large-scale artificial intelligence models for language processing on edge devices is limited by constraints in computational capacity and energy efficiency. To address this challenge, we present a hardware-algorithm co-design framework that leverages analog in-memory computing and hyperdimensional computing for efficient language identification at the edge. By exploiting the inherent randomness and multistate properties of analog memristors, we implement a vector matrix multiplication-based language feature encoding with much reduced hardware complexity. Language classification is then realized with a single-layer perceptron on analog memristive crossbar arrays, eliminating inter-layer activation functions and backward propagation during training that are required in deep neural networks. Experimental implementation on a multicore memristive system-on-a-chip demonstrates a 90% reduction in hardware resources while achieving 95.24% language identification accuracy, the highest reported among hyperdimensional computing implementations on emerging hardware platforms. This work provides a scalable, energy-efficient approach for high-accuracy language processing on edge devices. Energy-efficient, high-accuracy language processing on edge devices is currently constrained by limited computational capacity. Huang et al. propose a hardware–algorithm co-design that implements a vector–matrix multiplication-based language feature encoding with significantly reduced hardware complexity.
Authors
- Miao Hu (ORCID: https://orcid.org/0000-0002-6370-5564)
- Ning Ge (ORCID: https://orcid.org/0000-0002-1708-5018)
- Yi Huang (ORCID: https://orcid.org/0000-0001-9628-1721)
- Qiangfei Xia (ORCID: https://orcid.org/0000-0003-1436-8423)
- J. Joshua Yang (ORCID: https://orcid.org/0000-0001-8242-7531)
- Daniel Belkin (ORCID: https://orcid.org/0000-0002-3936-6419)
- Alireza Jaberi Rad
Institutions
- University of Southern California (US)
- Amherst College (US)
- University of Massachusetts Amherst (US)
- Tetra Tech (United States) (US)
Publication Details
- Journal
- Nature Communications
- Published
- 2026-07-28
- DOI
- https://doi.org/10.1038/s41467-026-76067-5
- Primary Topic
- Ferroelectric and Negative Capacitance Devices
- Type
- article
- Field-Weighted Citation Impact
- 0.00