Long‐Wavelength Infrared InAs/GaSb T2SLs on Silicon: A Review

Type‐II superlattice (T2SL) of InAs/GaSb is a potential candidate for next‐generation long‐wavelength infrared (LWIR) detectors due to its tunable bandgap and suppressed Auger recombination. However, large‐scale deployment is hindered by the cost and wafer size of GaSb. Silicon (Si) offers a scalable cost‐effective alternative for manufacturing. But direct epitaxy of T2SLs on Si leads is challenging due to the large lattice mismatch, differences in thermal expansion coefficient, and the formation of antiphase boundaries and threading dislocations. This review provides a critical analysis of buffer layer strategies for integrating GaSb‐based materials on Si, including GaAs/Si. Ge‐on‐Si templates, and interfacial misfit techniques. A quantitative comparison of buffer approaches is presented in terms of threading dislocation density, surface morphology, and compatibility with industrial growth methods. The distinct advantages and limitations of molecular beam epitaxy (MBE) and metalorganic chemical vapor deposition (MOCVD) are presented with an emphasis on interface control and scalability. Furthermore, we highlight the fundamental challenges limiting the realization of LWIR T2SLs on Si, in contrast to the mid‐wavelength infrared (MWIR) regime. We propose a GaSb/GaAs/Ge/Si buffer architecture as a pathway toward scalable industrial MOCVD processes for the monolithic integration of antimonide‐based infrared detectors on silicon platforms.