Day–Night Visual Perception Enabled by Vis–NIR Broadband Adaptive Transistors

Broadband adaptive vision is pivotal in enabling robust day-night visual operation in applications like autonomous driving and smart security. However, most existing active perception systems are confined to the visible spectrum regime. Here, we report a Vis-NIR broadband organic active adaptation transistor (VN-OAAT) by incorporating a dielectric embedded with ternary bulk-heterojunction, which simultaneously broadens the spectral response (400-1200 nm) and tunes the charge trapping activation energy. Through precise donor-acceptor compositional engineering, the device exhibits light-intensity-dependent photoresponse that enables photopic adaptation under high-illumination conditions and efficient photodetection in low-light environments, each spanning four orders of magnitude in intensity. Imaging experiments and simulations demonstrate that the device ensures all-day accurate vision with recognition accuracy over 96%. This ternary-heterojunction strategy addresses the intrinsic mismatch between high-performance NIR semiconductors and OAAT, establishing an efficient platform for broadband adaptive sensing in day-night machine vision applications.

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Publication Details

Journal
Advanced Materials
Published
2026-07-28
DOI
https://doi.org/10.1002/adma.74310
Primary Topic
Advanced Memory and Neural Computing
Type
article
Field-Weighted Citation Impact
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article

Day–Night Visual Perception Enabled by Vis–NIR Broadband Adaptive Transistors

Chong‐an Di, Daoben Zhu, Xiaozhang Zhu, Yongjie Chen et al.
Advanced Materials
Advanced Memory and Neural Computing
article

Day–Night Visual Perception Enabled by Vis–NIR Broadband Adaptive Transistors

Chong‐an Di, Daoben Zhu, Xiaozhang Zhu, Yongjie Chen, Chengyu Zhang, Yutao Ge, Ye Zou, Zepang Zhan, Yunjiang Zi, Wei Wang, Zixuan Liu, Weijie Wang, Liyao Liu, Xiaojuan Dai, Zitong Liu
article en

Abstract

Broadband adaptive vision is pivotal in enabling robust day-night visual operation in applications like autonomous driving and smart security. However, most existing active perception systems are confined to the visible spectrum regime. Here, we report a Vis-NIR broadband organic active adaptation transistor (VN-OAAT) by incorporating a dielectric embedded with ternary bulk-heterojunction, which simultaneously broadens the spectral response (400-1200 nm) and tunes the charge trapping activation energy. Through precise donor-acceptor compositional engineering, the device exhibits light-intensity-dependent photoresponse that enables photopic adaptation under high-illumination conditions and efficient photodetection in low-light environments, each spanning four orders of magnitude in intensity. Imaging experiments and simulations demonstrate that the device ensures all-day accurate vision with recognition accuracy over 96%. This ternary-heterojunction strategy addresses the intrinsic mismatch between high-performance NIR semiconductors and OAAT, establishing an efficient platform for broadband adaptive sensing in day-night machine vision applications.

Advanced Materials
Shanghai Jiao Tong University (CN), Chinese Academy of Sciences (CN), Beijing National Laboratory for Molecular Sciences (CN), Ministry of Education (BD), University of Chinese Academy of Sciences (CN), Lanzhou University (CN)
Openalex Percentile: Top 15%
Advanced Memory and Neural Computing
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