Measuring carrier lifetimes of an InGaAs/GaAsSb T2SL using an optical phase-shift technique
An optical phase-shift technique is demonstrated to measure the carrier lifetime of an InGaAs/GaAsSb type-II superlattice as a function of excess carrier density, showing good agreement with time-resolved photoluminescence data at low excitation. At 77 K, the minority-carrier lifetime is 369 ns.
Authors
- Samuel D. Hawkins (ORCID: https://orcid.org/0000-0002-4705-1628)
- Aaron J. Muhowski (ORCID: https://orcid.org/0000-0002-5659-6136)
- Priyanka Petluru (ORCID: https://orcid.org/0000-0002-5715-4284)
- Preston T. Webster (ORCID: https://orcid.org/0000-0002-7434-1735)
Institutions
- United States Air Force Research Laboratory (US)
- Kirtland Air Force Base (US)
- Sandia National Laboratories (US)
Publication Details
- Journal
- Applied Physics Letters
- Published
- 2026-07-27
- DOI
- https://doi.org/10.1063/5.0342423
- Primary Topic
- Semiconductor Quantum Structures and Devices
- Type
- article
- Field-Weighted Citation Impact
- 0.00