Molecular Engineering of Interlayer Spacings in 2D Dion–Jacobson Perovskites for High-Fidelity Neuromorphic Computing
and cycling endurance over 100 cycles. These devices emulate bioinspired synaptic functions, including the transition from short-term to long-term plasticity. Cross-Sim simulations of a three-layer neural network using the device conductance characteristics achieved a recognition accuracy of 96.6% for the MNIST data set, close to the software-defined benchmark of 98.2%. Overall, these results identify interlayer spacing as an important structural parameter that regulates ion migration, resistive switching behavior, and analog conductance modulation in 2D Dion-Jacobson perovskite memristors.
Authors
- Litao Sun (ORCID: https://orcid.org/0000-0002-2750-5004)
- Ho Won Jang (ORCID: https://orcid.org/0000-0002-6952-7359)
- Kuibo Yin (ORCID: https://orcid.org/0000-0001-5268-6807)
- Hyeon Ji Lee (ORCID: https://orcid.org/0009-0002-3299-4604)
- Qingyu Yang (ORCID: https://orcid.org/0000-0003-0106-4631)
- Binglin Liu
- Hee A Kim
- Sunbeom Park
- Bowen Jiang
- Jian Liang
- Guangjie Gu
Institutions
- Seoul National University (KR)
- Division of Materials Science and Engineering (AU)
Publication Details
- Journal
- ACS Nano
- Published
- 2026-07-26
- DOI
- https://doi.org/10.1021/acsnano.6c09004
- Primary Topic
- Advanced Memory and Neural Computing
- Type
- article
- Field-Weighted Citation Impact
- 0.00