Recent advances in spin‐orbit torque and magnetization switching of transition metal oxides

Abstract With the rapid development of information technology in the post‐Moore era, traditional charge‐based complementary metal‐oxide‐semiconductor (CMOS) devices are confronted with prominent issues such as high power consumption, difficult integration, and physical dimensions approaching the limit, which promotes the development of spintronics as a new research direction. Among various spintronic technologies, current‐driven magnetization switching based on spin‐orbit torque (SOT) exhibits distinct advantages, including fast response speed, high manipulation efficiency, and excellent stability, thereby providing a key pathway for high‐performance spintronic devices. Transition metal oxides (TMOs), featuring strong coupling of multiple degrees of freedom, abundant quantum states, and good compatibility with CMOS technology, have become highly promising candidate materials in the field of spintronics. This review summarizes the recent research progress of TMOs in spintronics, explains the origin and symmetry theory of SOT, discusses magnetization switching driven by spin currents and magnon currents as well as their related transport properties, and finally outlines the future development trends of TMO systems. This work is expected to provide a valuable reference for relevant research and practical applications in this field.