Theoretical Study of High-Performance Two-Dimensional WO <sub>2</sub> MOSFETs with Excellent n/p Symmetry
MOSFETs exhibit small delay time (τ) and low power delay product (PDP), providing a theoretical basis for material selection and device design of high-performance sub-10 nm 2D transistors.
Authors
- Hengze Qu (ORCID: https://orcid.org/0000-0002-6301-4405)
- Huipu Wang
- Wenhan Zhou (ORCID: https://orcid.org/0000-0001-8160-6394)
- Yuanyuan Tai
- Shengli Zhang (ORCID: https://orcid.org/0000-0003-4981-231X)
- Yongzhen Yu
- Weicong Sun
- Tong Xu (ORCID: https://orcid.org/0009-0003-8736-0470)
- Zuyun Chen
- Xuemin Hu
- Shuo Wang
Institutions
- Nanjing University of Science and Technology (CN)
- Nanjing University of Posts and Telecommunications (CN)
- Institute for the Future (US)
- Advanced Materials and Devices (United States) (US)
- Department of Chemistry and Material Sciences (RU)
- Jinling Institute of Technology (CN)
- Ministry of Industry and Information Technology (CN)
Publication Details
- Journal
- The Journal of Physical Chemistry Letters
- Published
- 2026-07-27
- DOI
- https://doi.org/10.1021/acs.jpclett.6c01925
- Primary Topic
- Transition Metal Oxide Nanomaterials
- Type
- article
- Field-Weighted Citation Impact
- 0.00
Funders
- National Natural Science Foundation of China
- Science and Technology Support Program of Jiangsu Province
- Fundamental Research Funds for the Central Universities