Retarding moisture-induced chemical degradation of Yttrium Tellurides by tailoring grain boundary chemistry

Abstract Grain boundary engineering has been extensively applied to improve thermoelectric performance, but its potential to enhance chemical stability remains underexplored. Here, we demonstrate that modifying grain boundary chemistry can effectively suppress the chemical degradation of Y 2 Te 3 under ambient conditions. Scanning transmission electron microscopy and atom probe tomography reveal that H 2 O preferentially infiltrates along grain boundaries, initiating oxidation of Y 2 Te 3 into Y–O–H phases and causing chemo-mechanical breakdown of the matrix. This process, remarkably, can be retarded by just 1 at.% of Bi incorporation due to its segregation along grain boundaries. Density functional theory calculations reveal the thermodynamic and kinetic origins of Bi segregation, and show how segregated Bi modifies the local electronic and chemical environment of grain boundaries, thereby linking GB chemistry to both chemical stability and thermoelectric performance. These findings establish multifunctional grain boundary engineering as a generalizable strategy for the design of next-generation thermoelectric materials.

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Publication Details

Journal
Nature Communications
Published
2026-07-25
DOI
https://doi.org/10.1038/s41467-026-76056-8
Primary Topic
Advanced Thermoelectric Materials and Devices
Type
article
Field-Weighted Citation Impact
0.00

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article

Retarding moisture-induced chemical degradation of Yttrium Tellurides by tailoring grain boundary chemistry

Kornelius Nielsch, Ruben Bueno Villoro, Su‐Hyun Yoo, Pyuck‐Pa Choi et al.
Nature Communications
Advanced Thermoelectric Materials and Devices
article

Retarding moisture-induced chemical degradation of Yttrium Tellurides by tailoring grain boundary chemistry

Kornelius Nielsch, Ruben Bueno Villoro, Su‐Hyun Yoo, Pyuck‐Pa Choi, Ran He, Chanwon Jung, Yonghyuk Lee, Eric Woods, Jamil Ur Rahman, Christina Scheu, Kyuseon Jang, Siyuan Zhang
article en

Abstract

Abstract Grain boundary engineering has been extensively applied to improve thermoelectric performance, but its potential to enhance chemical stability remains underexplored. Here, we demonstrate that modifying grain boundary chemistry can effectively suppress the chemical degradation of Y 2 Te 3 under ambient conditions. Scanning transmission electron microscopy and atom probe tomography reveal that H 2 O preferentially infiltrates along grain boundaries, initiating oxidation of Y 2 Te 3 into Y–O–H phases and causing chemo-mechanical breakdown of the matrix. This process, remarkably, can be retarded by just 1 at.% of Bi incorporation due to its segregation along grain boundaries. Density functional theory calculations reveal the thermodynamic and kinetic origins of Bi segregation, and show how segregated Bi modifies the local electronic and chemical environment of grain boundaries, thereby linking GB chemistry to both chemical stability and thermoelectric performance. These findings establish multifunctional grain boundary engineering as a generalizable strategy for the design of next-generation thermoelectric materials.

Nature Communications
Korea Advanced Institute of Science and Technology (KR), Institute of Chemical Technology (IN), Dongguk University (KR), Leibniz Institute for Solid State and Materials Research (DE), Max-Planck-Institut für Nachhaltige Materialien (DE), Korea Research Institute of Chemical Technology (KR), Pukyong National University (KR)
European Commission, National Research Foundation, Deutsche Forschungsgemeinschaft, Korea Research Institute of Chemical Technology, National Research Foundation of Korea, Ministry of Science and ICT, South Korea, HORIZON EUROPE Framework Programme, National Supercomputing Center, Korea Institute of Science and Technology Information
Openalex Percentile: Top 19%
Advanced Thermoelectric Materials and Devices
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