Electric Field Modulated SET and RESET Resistive Switching Process in Hafnia Zirconia Oxide

Hafnia oxide‐based resistive switching (RS) devices encounter key challenges as they scale, as variations in oxide layer thickness and the associated electric field can significantly impact both SET and RESET switching and conduction behaviors. This study aims at the thickness‐dependent RS properties of Al/Hf 0.75 Zr 0.25 O 2 (HZO)/Pt memory structures. The forming, SET, and RESET processes are analyzed across HZO film gauges, scaled from 50 to 3 nm, revealing a critical thickness (∼10 nm) below which the active HZO layer shows a sharp decrease in the SET electric field. The dependence of the SET and RESET electric fields on variations in thin‐film thickness is explored. Current–voltage ( I – V ) characterizations indicate that the Al/HZO/Pt devices exhibit excellent RS performance, with tunable SET/RESET voltages, a wide memory window, and high data retention. The observed switching behavior is attributed to the formation and rupture of conductive filaments associated with oxygen‐vacancy migration within the HZO layer. Furthermore, the devices exhibit perceptible retention, indicating stability and endurance, and less variability, making them adaptable for multiple potential applications.