A frequency-selective circuit in 180 nm CMOS

A frequency-selective device has been developed in the form of a rejector active filter based on transconductance amplifiers and capacitors in the 180 nm CMOS technology of Mikron JSC. The layout dimensions are 62 x 26 µm. Post-layout simulation results are as follows: rejection frequency is 312.5 MHz; passband gain is 1.44 dB; rejection is 23.1 dB; power consumption is 4.8 mW; total harmonic distortion is 0.07%. A comparison with the results from other studies is performed. The device can be applied in optical communication systems.