Terahertz‐Nanoscale Visualization of the Microscopic Spin‐Charge Architecture of Colossal Magnetoresistive Switching

ABSTRACT Resolving sub‐10 nm spin switching and the associated terahertz (THz) electrodynamics during the colossal magnetoresistance (CMR) transition is a definitive frontier in reaching the fundamental spatial, temporal, and energy‐dissipation limits of spin‐electronics. Yet, simultaneous control of high magnetic field, cryogenic environment, and nanometer resolution has remained an elusive benchmark for THz nanoscopy, leaving the local THz dynamics of these transitions largely unexplored. Here, we overcome these limitations by utilizing a custom‐built cryogenic magneto‐THz scattering‐type scanning near‐field optical microscopy (cm‐THz‐sSNOM) to resolve the near‐field THz spectroscopic evolution of the magnetic field‐driven CMR transition in a manganite single crystal. Our measurements provide a nanoscale visualization of the THz conductivity, capturing the moment that magnetic‐field‐induced spin switching triggers the transition from an antiferromagnetic insulator to a ferromagnetic metal. An ellipsoidal near‐field model reveals a multi‐scale transition initiated by 1–2 nm isolated spin‐flip sites at low magnetic fields, which coalesce into 15 nm conducting regions as the threshold field is approached. These results provide an nano‐THz view of CMR switching, establishing an analysis framework for mapping spin–charge–lattice–orbit–coupled dynamics at spatial scales that transcend the nominal sSNOM resolution.

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Publication Details

Journal
Advanced Science
Published
2026-07-24
DOI
https://doi.org/10.1002/advs.76799
Primary Topic
Magnetic properties of thin films
Type
article
Field-Weighted Citation Impact
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article

Terahertz‐Nanoscale Visualization of the Microscopic Spin‐Charge Architecture of Colossal Magnetoresistive Switching

Thomas Koschny, R. K. Chan, J.-M. Park, Martin Mootz et al.
Advanced Science
Magnetic properties of thin films
article

Terahertz‐Nanoscale Visualization of the Microscopic Spin‐Charge Architecture of Colossal Magnetoresistive Switching

Thomas Koschny, R. K. Chan, J.-M. Park, Martin Mootz, Samuel Haeuser, Richard H. J. Kim, Jigang Wang
article en

Abstract

ABSTRACT Resolving sub‐10 nm spin switching and the associated terahertz (THz) electrodynamics during the colossal magnetoresistance (CMR) transition is a definitive frontier in reaching the fundamental spatial, temporal, and energy‐dissipation limits of spin‐electronics. Yet, simultaneous control of high magnetic field, cryogenic environment, and nanometer resolution has remained an elusive benchmark for THz nanoscopy, leaving the local THz dynamics of these transitions largely unexplored. Here, we overcome these limitations by utilizing a custom‐built cryogenic magneto‐THz scattering‐type scanning near‐field optical microscopy (cm‐THz‐sSNOM) to resolve the near‐field THz spectroscopic evolution of the magnetic field‐driven CMR transition in a manganite single crystal. Our measurements provide a nanoscale visualization of the THz conductivity, capturing the moment that magnetic‐field‐induced spin switching triggers the transition from an antiferromagnetic insulator to a ferromagnetic metal. An ellipsoidal near‐field model reveals a multi‐scale transition initiated by 1–2 nm isolated spin‐flip sites at low magnetic fields, which coalesce into 15 nm conducting regions as the threshold field is approached. These results provide an nano‐THz view of CMR switching, establishing an analysis framework for mapping spin–charge–lattice–orbit–coupled dynamics at spatial scales that transcend the nominal sSNOM resolution.

Advanced Science
Iowa State University (US), Ames National Laboratory (US)
U.S. Department of Energy
Openalex Percentile: Top 10%
Magnetic properties of thin films
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