Beyond CdS: Buffer Layers, Front Interfaces and Junction Engineering in p-Type Thin-Film Solar Cells

Cadmium sulfide has been widely used as a conventional n-type window/buffer layer or heterojunction partner in several p-type thin-film solar cells, including CdTe/CdSeTe-, chalcopyrite-, kesterite-, antimony chalcogenide-, tin sulfide- and iron pyrite-based devices. Its success is related to its ability to form suitable heterojunctions, partially passivate absorber surfaces and provide favorable electronic selectivity. However, the parasitic absorption associated with the relatively narrow band gap of CdS, the toxicity and waste-management issues related to cadmium-containing auxiliary layers and the need for improved band alignment have motivated extensive research on CdS-free window and buffer layers. This review summarizes the main efforts devoted to replacing CdS in thin-film solar cells based on absorbers such as CdTe/CdSeTe, CIS, CIGS, CZTS, CZTSe, CZTSSe, Sb2S3, Sb2Se3, Sb2(S,Se)3, SnS and FeS2. The most investigated alternative materials, including Zn(O,S), ZnS, In2S3, ZnMgO, ZnSnO, TiO2, SnO2 and SnS2, are discussed with emphasis on their optical properties, band alignment, interface quality, deposition methods and impact on device performance. The analysis highlights that CdS replacement cannot be treated as a universal material substitution problem. Instead, each absorber and device architecture requires a specific front-interface design, where chemical compatibility, conduction band offset, defect passivation, optical transparency and process-induced interfacial modifications play a decisive role. CdS-free approaches are relatively mature for CdTe/CdSeTe- and CIGS-based solar cells, whereas kesterite absorbers, antimony chalcogenides and SnS still require further interface engineering. In FeS2, by contrast, buffer-layer substitution remains secondary to the control of intrinsic surface and bulk electronic defects. This review provides a concise comparison of the most relevant CdS-free front/window materials and identifies key challenges for the future design of sustainable thin-film solar cells.

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Journal
Energies
Published
2026-07-24
DOI
https://doi.org/10.3390/en19153484
Primary Topic
Chalcogenide Semiconductor Thin Films
Type
article
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article

Beyond CdS: Buffer Layers, Front Interfaces and Junction Engineering in p-Type Thin-Film Solar Cells

Sara Russo, A. Bosio, Stefano Pasini, Muhammad Kashif
Energies
Chalcogenide Semiconductor Thin Films
article

Beyond CdS: Buffer Layers, Front Interfaces and Junction Engineering in p-Type Thin-Film Solar Cells

Sara Russo, A. Bosio, Stefano Pasini, Muhammad Kashif
article en

Abstract

Cadmium sulfide has been widely used as a conventional n-type window/buffer layer or heterojunction partner in several p-type thin-film solar cells, including CdTe/CdSeTe-, chalcopyrite-, kesterite-, antimony chalcogenide-, tin sulfide- and iron pyrite-based devices. Its success is related to its ability to form suitable heterojunctions, partially passivate absorber surfaces and provide favorable electronic selectivity. However, the parasitic absorption associated with the relatively narrow band gap of CdS, the toxicity and waste-management issues related to cadmium-containing auxiliary layers and the need for improved band alignment have motivated extensive research on CdS-free window and buffer layers. This review summarizes the main efforts devoted to replacing CdS in thin-film solar cells based on absorbers such as CdTe/CdSeTe, CIS, CIGS, CZTS, CZTSe, CZTSSe, Sb2S3, Sb2Se3, Sb2(S,Se)3, SnS and FeS2. The most investigated alternative materials, including Zn(O,S), ZnS, In2S3, ZnMgO, ZnSnO, TiO2, SnO2 and SnS2, are discussed with emphasis on their optical properties, band alignment, interface quality, deposition methods and impact on device performance. The analysis highlights that CdS replacement cannot be treated as a universal material substitution problem. Instead, each absorber and device architecture requires a specific front-interface design, where chemical compatibility, conduction band offset, defect passivation, optical transparency and process-induced interfacial modifications play a decisive role. CdS-free approaches are relatively mature for CdTe/CdSeTe- and CIGS-based solar cells, whereas kesterite absorbers, antimony chalcogenides and SnS still require further interface engineering. In FeS2, by contrast, buffer-layer substitution remains secondary to the control of intrinsic surface and bulk electronic defects. This review provides a concise comparison of the most relevant CdS-free front/window materials and identifies key challenges for the future design of sustainable thin-film solar cells.

EnergiesVol. 19(15)
University of Parma (IT)
Openalex Percentile: Top 15%
Chalcogenide Semiconductor Thin Films
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