Environmental Effects on RRAM Cells Based on 2D Halide Perovskite Materials

ABSTRACT Because of features such as high speed, scalability, low programming voltage, and low power consumption, RRAM (Resistive Random Access Memory) is a leading candidate for next‐generation non‐volatile memories. Among the diverse array of active materials investigated for RRAM devices, two‐dimensional (2D) halide perovskites have garnered considerable interest due to their adjustable optoelectronic characteristics, ease of solution processing, and compatibility with flexible substrates. However, the inherent sensitivity of halide perovskites to environmental conditions presents significant obstacles in achieving stable and reliable device performance. This review examines how humidity, temperature, illumination, and mechanical strain affect the performance of RRAM devices based on 2D halide perovskites. This review explores how various stress factors contribute to degradation mechanisms and their effects on switching characteristics, endurance, and data retention. The paper also highlights the analytical techniques used to evaluate the stability of these devices. In addition, recent advances are presented in both material design and device architecture aimed at improving resistance to environmental influences. By pinpointing critical obstacles and unmet research needs, this review charts a path toward resilient 2D perovskite RRAM for real‐world applications.