Sezawa-Mode Surface Acoustic Wave Resonators in Pulsed-Laser-Deposited Pb0.9Ba0.1(Zr0.52,Ti0.48)O3 on Bulk Silicon

Barium-doped Lead Zirconate Titanate Pb0.9Ba0.1(Zr0.53Ti0.47)O3 films with a (001)-dominant orientation were deposited on bulk silicon (Si) substrates using pulsed laser deposition (PLD). Due to the large electromechanical coupling coefficient (K2) of the P(B)ZT layer and the larger shear modulus of the Si substrate compared to the P(B)ZT film, it is possible to obtain higher-order acoustic-resonant modes (Sezawa mode) with SAW wavelength (λ)–piezoelectric film thickness (h) ratios below h/λ < 0.2. Due to the ferroelectric properties of the P(B)ZT film, the resonator’s performance can be improved by increasing the electric polarization. Consequently, the measured quality (Q) factors can be improved from 50 to 200 and the K2 values can be improved from 2 to 5% with the resonance frequency ranging from 275 to 500 MHz.

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Publication Details

Journal
Micromachines
Published
2026-07-22
DOI
https://doi.org/10.3390/mi17070868
Primary Topic
Acoustic Wave Resonator Technologies
Type
article
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article

Sezawa-Mode Surface Acoustic Wave Resonators in Pulsed-Laser-Deposited Pb0.9Ba0.1(Zr0.52,Ti0.48)O3 on Bulk Silicon

Minh Nguyen, Niels Tas, Erwin Berenschot, Yves Janssens
Micromachines
Acoustic Wave Resonator Technologies
article

Sezawa-Mode Surface Acoustic Wave Resonators in Pulsed-Laser-Deposited Pb0.9Ba0.1(Zr0.52,Ti0.48)O3 on Bulk Silicon

Minh Nguyen, Niels Tas, Erwin Berenschot, Yves Janssens
article en

Abstract

Barium-doped Lead Zirconate Titanate Pb0.9Ba0.1(Zr0.53Ti0.47)O3 films with a (001)-dominant orientation were deposited on bulk silicon (Si) substrates using pulsed laser deposition (PLD). Due to the large electromechanical coupling coefficient (K2) of the P(B)ZT layer and the larger shear modulus of the Si substrate compared to the P(B)ZT film, it is possible to obtain higher-order acoustic-resonant modes (Sezawa mode) with SAW wavelength (λ)–piezoelectric film thickness (h) ratios below h/λ < 0.2. Due to the ferroelectric properties of the P(B)ZT film, the resonator’s performance can be improved by increasing the electric polarization. Consequently, the measured quality (Q) factors can be improved from 50 to 200 and the K2 values can be improved from 2 to 5% with the resonance frequency ranging from 275 to 500 MHz.

MicromachinesVol. 17(7)
University of Twente (NL)
Affordable and clean energy
Openalex Percentile: Top 15%
Acoustic Wave Resonator Technologies
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