Broadband Quantum Rectification and Mixing Via the Nonlinear Transport in PtTe <sub>2</sub>

The rapid growth of Internet of Things, 6G communication, and millimeter wave systems demands broadband rectifiers and mixers. The nonlinear Hall effect (NLHE) provides a junction-free route for broadband signal processing, overcoming high-frequency limitations associated with threshold voltages and junction capacitance in conventional semiconductor technologies. However, few NLHE material platforms combine strong nonlinearity, high conductivity, and compatibility with wafer-scale processing. In this work, we demonstrate NLHE in PtTe 2 thin films with a second-order conductivity of 0.005 Ω –1 V –1 and a DC conductivity of 9.5 × 10 5 S/m at room temperature. The films enable bias-free rectification from 0.62 to 2.88 THz and frequency mixing from 0.1 to 40 GHz, including wireless mixing in the GHz regime. The passive mixer exhibits a 1 dB compression point of 8 dBm. These results establish PtTe 2 as a wafer-scale platform for high-frequency signal processing, highlighting the practical potential of NLHE for next-generation communication and electronic technologies.

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Publication Details

Journal
Nano Letters
Published
2026-07-22
DOI
https://doi.org/10.1021/acs.nanolett.6c01639
Primary Topic
2D Materials and Applications
Type
article
Field-Weighted Citation Impact
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article

Broadband Quantum Rectification and Mixing Via the Nonlinear Transport in PtTe 2

Hanbum Park, M. E. Bal, Goki Eda, Н. Дессманн et al.
Nano Letters
2D Materials and Applications
article

Broadband Quantum Rectification and Mixing Via the Nonlinear Transport in PtTe 2

Hanbum Park, M. E. Bal, Goki Eda, Н. Дессманн, Z B Li, Hyunsoo Yang, Fanrui Hu, Fei Wang, Jiayu Lei, Cheng Quan Wong, Kirilyu Andrei
article en

Abstract

The rapid growth of Internet of Things, 6G communication, and millimeter wave systems demands broadband rectifiers and mixers. The nonlinear Hall effect (NLHE) provides a junction-free route for broadband signal processing, overcoming high-frequency limitations associated with threshold voltages and junction capacitance in conventional semiconductor technologies. However, few NLHE material platforms combine strong nonlinearity, high conductivity, and compatibility with wafer-scale processing. In this work, we demonstrate NLHE in PtTe 2 thin films with a second-order conductivity of 0.005 Ω –1 V –1 and a DC conductivity of 9.5 × 10 5 S/m at room temperature. The films enable bias-free rectification from 0.62 to 2.88 THz and frequency mixing from 0.1 to 40 GHz, including wireless mixing in the GHz regime. The passive mixer exhibits a 1 dB compression point of 8 dBm. These results establish PtTe 2 as a wafer-scale platform for high-frequency signal processing, highlighting the practical potential of NLHE for next-generation communication and electronic technologies.

Nano Letters
Radboud University Nijmegen (NL), National University of Singapore (SG), Felix Scholarship (GB), HFML-FELIX (NL)
Openalex Percentile: Top 18%
2D Materials and Applications
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