Non-Invasive Condition Monitoring of Press-Pack IGBT Modules in MMC-HVDC Systems via Case-Temperature Observability and an Aging Fingerprint Database
Press-pack insulated-gate bipolar transistor (IGBT) devices are key components of modular multilevel converter (MMC)-based HVDC systems, yet the parallel connection of tens of chips inside one sealed housing makes their internal aging difficult to monitor—existing methods cannot determine which chip or thermal interface has degraded without invasive sensing. This paper proposes a two-layer aging condition monitoring framework based solely on non-invasive external case temperature measurements, comprising an online detection layer and a detection layer. For the diagnosis layer, a coupled thermal network state-space model of the press-pack module is established; its observability matrix is shown to be of full rank, proving that aging at any internal location is detectable from external case temperatures, and a steady-state sensitivity analysis reduces the required measurement to the module-center case-temperature pair and yields a failure-signature rule that discriminates five aging modes. A 3D electrothermal finite-element model, validated against fiber Bragg grating (FBG) measurements on an MMC sub-module with deviations below 1.2 °C at all load levels, is then used to build an aging fingerprint database of 270 scenarios that maps a measured case-temperature distribution to the aging location, the affected component, and the severity of any cooling-system degradation. For the detection layer, a deep neural network (DNN) trained only on healthy-state data provides online early warnings through its prediction residual. Experiments on a 2.2 kV/2100 A MMC sub-module platform and a solid-state DC–DC transformer platform confirm that cooling-system degradation is reliably detected and that the detection layer transfers across converter types. Even in the least sensitive aging case, the predicted case-temperature signature (0.036 °C) exceeds the 0.01 °C resolution of standard thermocouple instrumentation, which indicates that genuine device aging would be resolvable as well. The framework provides a non-invasive online health-monitoring solution that can also locate the degraded element in high-power press-pack devices.
Authors
- Daojie Pu
- Zhang Chun (ORCID: https://orcid.org/0000-0001-6779-8609)
- Hui Fang (ORCID: https://orcid.org/0000-0001-9365-7420)
- Yao Xu (ORCID: https://orcid.org/0009-0006-9112-6865)
- Wei J
- C Xu
Institutions
- Hefei University of Technology (CN)
- State Grid Corporation of China (China) (CN)
Publication Details
- Journal
- Electronics
- Published
- 2026-07-22
- DOI
- https://doi.org/10.3390/electronics15143220
- Primary Topic
- Silicon Carbide Semiconductor Technologies
- Type
- article
- Field-Weighted Citation Impact
- 0.00