Pd-Functionalized Graphene-Gated GaN HEMTs for High-Sensitive Gas Detection and Optoelectronic Recovery
, a performance supported by density functional theory (DFT) and technology computer-aided design (TCAD) simulations of the interface electrostatics. These results establish a pathway for a low-power, high-responsivity gas sensing system.
Authors
- S J. Kim
- Kyusang Lee (ORCID: https://orcid.org/0000-0001-7123-3395)
- Byungjoon Bae (ORCID: https://orcid.org/0000-0002-4305-3853)
- Mona Zebarjadi (ORCID: https://orcid.org/0000-0002-9170-2707)
- Junseok Heo (ORCID: https://orcid.org/0000-0002-8125-6141)
- Sree Sourav Das (ORCID: https://orcid.org/0000-0002-9010-2005)
- Dong Hyuk Park (ORCID: https://orcid.org/0000-0003-3508-2133)
- Do Wan Kim (ORCID: https://orcid.org/0000-0002-9598-1934)
- Byungsoo Kim (ORCID: https://orcid.org/0000-0003-4482-8363)
- Taemin Kim
- Taekyun Kim
Institutions
- ON Semiconductor (United States) (US)
- Inha University (KR)
- Department of Physics, Mathematics and Informatics (BY)
- University of Virginia (US)
- Ajou University (KR)
Publication Details
- Journal
- ACS Sensors
- Published
- 2026-07-18
- DOI
- https://doi.org/10.1021/acssensors.6c01293
- Primary Topic
- GaN-based semiconductor devices and materials
- Type
- article
- Field-Weighted Citation Impact
- 0.00
Funders
- National Research Foundation of Korea
- Division of Electrical, Communications and Cyber Systems
- Air Force Office of Scientific Research