Ternary BiSeBr for polarization-sensitive infrared photodetector
Infrared optoelectronic detectors are essential in a variety of applications. This research focuses on investigating the phonon vibrations and optoelectronic properties of BiSeBr, as well as the development of a photodetector based on BiSeBr. The phonon vibration anisotropy was confirmed using angle-resolved polarized Raman spectroscopy. Remarkably, the BiSeBr-based photodetector demonstrates high responsivities of 3.70 and 0.445 A/W when exposed to 638 and 980 nm laser light, respectively. Additionally, the photodetector shows notable polarization sensitivity, with anisotropy ratios of 1.79 and 1.56 under the 980 and 638 nm laser illumination, respectively. These excellent optoelectronic properties make BiSeBr a highly competitive candidate for future polarization-sensitive infrared photodetector applications.
Authors
- Yuehua Peng (ORCID: https://orcid.org/0000-0002-5484-9830)
- Dongsheng Tang (ORCID: https://orcid.org/0000-0003-0804-983X)
- Weichang Zhou (ORCID: https://orcid.org/0000-0003-3140-5951)
- Yanling Yin (ORCID: https://orcid.org/0000-0002-8095-6541)
- Xue Chen (ORCID: https://orcid.org/0000-0002-6336-2696)
- Weike Wang (ORCID: https://orcid.org/0000-0001-5267-2712)
- Canhui Pan
- Yi-Xiang Wang (ORCID: https://orcid.org/0000-0002-5246-5497)
- Jianan Li
- Junhao Huang
- Kexin Chen (ORCID: https://orcid.org/0009-0005-1345-5121)
- Xuanmao Xu (ORCID: https://orcid.org/0009-0003-5315-3895)
Institutions
- Ministry of Education (IR)
Publication Details
- Journal
- Journal of Applied Physics
- Published
- 2026-07-17
- DOI
- https://doi.org/10.1063/5.0339843
- Primary Topic
- Advanced Semiconductor Detectors and Materials
- Type
- article
- Field-Weighted Citation Impact
- 0.00
Funders
- Natural Science Foundation of Hunan Province
- Scientific Research Foundation of Hunan Provincial Education Department