Modulation of nonlinear optical properties of doped <i>GaAs</i> quantum dot by the interplay between noise and confinement ratio
The study deals with a few nonlinear optical (NLO) properties of impurity doped GaAs quantum dot (QD). The NLO properties considered are the total optical dielectric function (TODF), the electro-optic effect (EOE) and the third-order nonlinear optical susceptibility (TONOS). Added to this, a related property viz. intraband transition lifetime (ITL) has also been examined. Linear variational principle has been employed for solving the time-independent Schrödinger equation with product of harmonic oscillator eigenstates as the basis functions. This is followed by the construction of the Hamiltonian matrix and its subsequent diagonalization to obtain the normalized eigenvectors and the energy eigenvalues. Various NLO properties are determined using density matrix treatment and iterative procedure. The study focuses on how the interplay between Gaussian white noise and the confinement ratio (CFR) can impact the above properties. The said interplay has been found to be dependent on the mode of incorporation of noise to the QD system. The interplay affects the peak values and peak shifts of the NLO properties in an intricate way. Moreover, the interplay also causes enhancement and suppression of above properties relative to the noise-free condition.
Authors
- Manas Ghosh (ORCID: https://orcid.org/0000-0002-5790-6976)
- Bhaskar Bhakti (ORCID: https://orcid.org/0009-0001-5916-3408)
- Soumyajit Beltharia
Institutions
- Twitter (United States) (US)
Publication Details
- Journal
- International Journal of Nanoscience
- Published
- 2026-07-17
- DOI
- https://doi.org/10.1142/s0219581x26400211
- Primary Topic
- Semiconductor Quantum Structures and Devices
- Type
- article
- Field-Weighted Citation Impact
- 0.00