PC1D Modelling of the Impact of Layer Thickness, Doping Concentration, and Operating Temperature on InGaN Solar Cells

In this research, indium gallium nitride (InGaN), gallium nitride (GaN), and silicon (Si) were combined to develop a heterojunction solar cell with optimal results using the Personal Computer One Dimensional (PC1D) simulation. This research investigates the impact of structural and design parameters, specifically; thickness and doping, on the performance of InGaN solar cells. The electrical properties of these solar cells were examined to determine their optimum conditions. Based on the findings, appropriate layer thickness, doping concentration, and operation temperature, all together contribute to enhance electron mobility and solar cell efficiency (η). The quantum efficiency at the highest temperature is the lowest among all the temperatures, resulting in poor photon absorption. Furthermore, η decreases with increasing temperature, from 25.13% at 300 K to 6.04% at 550 K. The InGaN solar cells demonstrated a short-circuit current (Isc) of 39.45 mA/cm², an open-circuit voltage (Voc) of 0.7464 V, a maximum power output (Pmax) of 0.2529 W, a fill factor (FF) of 85.89%, and an efficiency of 25.29%, showing improvements compared to previous works.