Broadband few-layer MoTe2 photodetectors for array

High-performance broadband photodetector arrays are pivotal for sensing, imaging and optical communication technologies, yet scalable materials that simultaneously offer broadband photoresponse coverage, fast response speed and uniform device performance remain elusive. Here, we present a 3×5 photodetector array based on few-layer MoTe2 grown via chemical vapor deposition (CVD) method. The MoTe2 photodetector exhibits a stable photoresponse ranging from ultraviolet to near-infrared regions. The device features a responsivity (R) of 3.82 mA/W, an external quantum efficiency (EQE) of 1.17% and a detectivity (D*) of 1.62×107 Jones under 405 nm illumination (5.04 mW/cm2) at Vds = 2 V and Vgs = 0 V. The response time and recovery time remain on the millisecond scale throughout the entire photoresponse coverage. This work provides a feasible route toward the construction of high-performance broadband photodetector arrays using single material alone.