Ambient‐Stable Transparent P‐Type CuI Transistors Via Room‐Temperature Pulsed Laser Deposition

ABSTRACT The rapid growth of the transparent electronics market has driven the demand for transparent thin‐film transistors (TFTs) and complementary TFT circuits. However, transparent complementary devices, which are essential for energy‐efficient circuits, remain scarce due to the lack of high‐performance p‐type transparent semiconductors. As a promising candidate for transparent conductive materials, ‐CuI combines the advantages of high hole mobility and optical transparency, but it faces challenges regarding intermediate doping and stability of conductivity under ambient conditions. In this work, room‐temperature pulsed laser deposition is used to deposit ‐CuI and an amorphous capping layer in situ. High quality ‐CuI thin films and perfect encapsulation allow us to investigate the intrinsic and doping electrical behavior under ambient conditions. Moreover, stable operation of p‐channel TFTs is achieved, featuring a field‐effect mobility of 2.3 0.7 and on/off ratio of 1 10 with ambient stability. The complementary TFT inverter based on wide‐bandgap p‐type CuI:Rb and n‐type ZnO:Al exhibits ultra‐low static power consumption of 6 nW. This work not only offers a robust method to investigate ‐CuI under ambient conditions, but also paves the way for CuI‐based transparent electronic applications.