Mathematical expressions of germanium conduction band: Solved using anti-bond orbital model

The formation of α( = s, x, y, z)-like anti-bond orbitals (ABOs) is explained in detail: from atomic orbitals, sp3 tetragonal hybrid orbitals, sp3 tetragonal antibonding orbitals, and finally α-like ABOs. The mathematical formulas for ABO Hamiltonian matrix are derived in detail and illustrated with diagrams. The ABO model is used to explore the conduction band of germanium (Ge). Therefore, the mathematical expressions for its s-, x-, y-, and z-like bands and the ABO composition ratios of each band are obtained. Furthermore, the mathematical expressions for each α-like band derived in this paper are well-suited for computer simulations of advanced Ge-based nanoelectronic devices under conditions of higher electron energies.

Authors

Institutions

Publication Details

Journal
Journal of Applied Physics
Published
2026-07-17
DOI
https://doi.org/10.1063/5.0337473
Primary Topic
Semiconductor materials and interfaces
Type
article
Field-Weighted Citation Impact
0.00
Controls
|||
ALL TIME
JAN
FEB
MAR
APR
MAY
JUN
JUL
AUG
SEP
OCT
article

Mathematical expressions of germanium conduction band: Solved using anti-bond orbital model

Win‐Jet Luo, Prateek Negi, Bivas Panigrahi, Chun-Nan Chen
Journal of Applied Physics
Semiconductor materials and interfaces
article

Mathematical expressions of germanium conduction band: Solved using anti-bond orbital model

Win‐Jet Luo, Prateek Negi, Bivas Panigrahi, Chun-Nan Chen
article en

Abstract

The formation of α( = s, x, y, z)-like anti-bond orbitals (ABOs) is explained in detail: from atomic orbitals, sp3 tetragonal hybrid orbitals, sp3 tetragonal antibonding orbitals, and finally α-like ABOs. The mathematical formulas for ABO Hamiltonian matrix are derived in detail and illustrated with diagrams. The ABO model is used to explore the conduction band of germanium (Ge). Therefore, the mathematical expressions for its s-, x-, y-, and z-like bands and the ABO composition ratios of each band are obtained. Furthermore, the mathematical expressions for each α-like band derived in this paper are well-suited for computer simulations of advanced Ge-based nanoelectronic devices under conditions of higher electron energies.

Journal of Applied PhysicsVol. 140(3)
Tamkang University (TW), National Chin-Yi University of Technology (TW)
Affordable and clean energy
Openalex Percentile: Top 10%
Semiconductor materials and interfaces
AI Navigator

Ask Laika to Summarize, Analyze, and Connect papers live on the map.

Summarize Papers & Methodologies

Extract key findings, datasets, and comparative methods across publications.

Benchmark Rankings & Visual Analytics

Rank top research institutions, authors, funders, topics, and journals by Field-Weighted Citation Impact (FWCI) and paper volume with instant charts.

Connect Distant Disciplines

Bridge topological clusters on the map to find hidden collaborative intersections.

Mathematical expressions of germanium conduction band: Solved using anti-bond orbital model — Win‐Jet Luo, Prateek Negi, et al. · Journal of Applied Physics (2026) | TGRS Research Map | TGRS