Defect-Engineered Flexible ZnO Synaptic TFTs for Adaptive Visual Preprocessing and In-Sensor Reservoir Computing
Reliable visual perception under extreme illumination (underexposure/overexposure) and the trade-off between device operation and photoresponse tunability remain challenges for wearable-compatible vision systems. Inspired by the adaptive gain-control mechanism of the vertebrate retina, we report a hardware-algorithm codesign framework based on defect-engineered ZnO synaptic thin-film transistors for in-sensor visual preprocessing and reservoir computing. On flexible polyimide substrates, a low-temperature (150 °C) defect-engineering strategy combining an Al 2 O 3 planarization layer with a controlled air anneal drives the ZnO channel into a partially passivated state, reducing the defect-related O 1s component from 41.37% to 13.09% while retaining trap-related states required for programmable synaptic plasticity. The resulting synaptic TFTs achieve pA-level off-state currents and gate-programmable paired-pulse facilitation tunable from 163% to 112%. Building on this gate-tunable defect-mediated photoresponse, we design a simulated 20 × 20 pixel-level adaptive preprocessing array in which calibration-based dynamic gate-bias control enables physical-layer gain modulation to mitigate overexposure and enhance underexposed signals. This device-assisted physical-layer preprocessing yields a 5.8 dB improvement in peak signal-to-noise ratio and a 0.29 gain in the structural similarity index, restoring downstream machine-vision accuracy by 30.56 percentage points. Furthermore, exploiting the intrinsic fading memory of the defect-engineered ZnO channel, in-sensor physical reservoir computing is realized with a 96.58% recognition accuracy on the MNIST data set. This material-engineered strategy offers a potential pathway toward robust visual perception in unpredictable optical environments for wearable-compatible electronics.
Authors
- Peiwen Tong (ORCID: https://orcid.org/0000-0003-0210-3436)
- Qimiao Zeng (ORCID: https://orcid.org/0000-0002-2673-8340)
- C Y Liu
- Ma Jw
- Yuanhao Sun (ORCID: https://orcid.org/0000-0002-4809-809X)
- Wei Wang (ORCID: https://orcid.org/0000-0002-7180-831X)
- Rongrong Cao (ORCID: https://orcid.org/0000-0001-8760-8577)
- Qingjiang Li (ORCID: https://orcid.org/0000-0001-9779-3198)
- Texu Liu
- Shuo Han
- Jindong Liu (ORCID: https://orcid.org/0009-0002-7776-7720)
Institutions
- National University of Defense Technology (CN)
Publication Details
- Journal
- ACS Applied Nano Materials
- Published
- 2026-07-16
- DOI
- https://doi.org/10.1021/acsanm.6c02203
- Primary Topic
- Advanced Memory and Neural Computing
- Type
- article
- Field-Weighted Citation Impact
- 0.00
Funders
- National Natural Science Foundation of China
- Science and Technology Program of Hunan Province
- National Key Research and Development Program of China