Defect-Engineered Flexible ZnO Synaptic TFTs for Adaptive Visual Preprocessing and In-Sensor Reservoir Computing

Reliable visual perception under extreme illumination (underexposure/overexposure) and the trade-off between device operation and photoresponse tunability remain challenges for wearable-compatible vision systems. Inspired by the adaptive gain-control mechanism of the vertebrate retina, we report a hardware-algorithm codesign framework based on defect-engineered ZnO synaptic thin-film transistors for in-sensor visual preprocessing and reservoir computing. On flexible polyimide substrates, a low-temperature (150 °C) defect-engineering strategy combining an Al 2 O 3 planarization layer with a controlled air anneal drives the ZnO channel into a partially passivated state, reducing the defect-related O 1s component from 41.37% to 13.09% while retaining trap-related states required for programmable synaptic plasticity. The resulting synaptic TFTs achieve pA-level off-state currents and gate-programmable paired-pulse facilitation tunable from 163% to 112%. Building on this gate-tunable defect-mediated photoresponse, we design a simulated 20 × 20 pixel-level adaptive preprocessing array in which calibration-based dynamic gate-bias control enables physical-layer gain modulation to mitigate overexposure and enhance underexposed signals. This device-assisted physical-layer preprocessing yields a 5.8 dB improvement in peak signal-to-noise ratio and a 0.29 gain in the structural similarity index, restoring downstream machine-vision accuracy by 30.56 percentage points. Furthermore, exploiting the intrinsic fading memory of the defect-engineered ZnO channel, in-sensor physical reservoir computing is realized with a 96.58% recognition accuracy on the MNIST data set. This material-engineered strategy offers a potential pathway toward robust visual perception in unpredictable optical environments for wearable-compatible electronics.

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Publication Details

Journal
ACS Applied Nano Materials
Published
2026-07-16
DOI
https://doi.org/10.1021/acsanm.6c02203
Primary Topic
Advanced Memory and Neural Computing
Type
article
Field-Weighted Citation Impact
0.00

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article

Defect-Engineered Flexible ZnO Synaptic TFTs for Adaptive Visual Preprocessing and In-Sensor Reservoir Computing

Peiwen Tong, Qimiao Zeng, C Y Liu, Ma Jw et al.
ACS Applied Nano Materials
Advanced Memory and Neural Computing
article

Defect-Engineered Flexible ZnO Synaptic TFTs for Adaptive Visual Preprocessing and In-Sensor Reservoir Computing

Peiwen Tong, Qimiao Zeng, C Y Liu, Ma Jw, Yuanhao Sun, Wei Wang, Rongrong Cao, Qingjiang Li, Texu Liu, Shuo Han, Jindong Liu
article en

Abstract

Reliable visual perception under extreme illumination (underexposure/overexposure) and the trade-off between device operation and photoresponse tunability remain challenges for wearable-compatible vision systems. Inspired by the adaptive gain-control mechanism of the vertebrate retina, we report a hardware-algorithm codesign framework based on defect-engineered ZnO synaptic thin-film transistors for in-sensor visual preprocessing and reservoir computing. On flexible polyimide substrates, a low-temperature (150 °C) defect-engineering strategy combining an Al 2 O 3 planarization layer with a controlled air anneal drives the ZnO channel into a partially passivated state, reducing the defect-related O 1s component from 41.37% to 13.09% while retaining trap-related states required for programmable synaptic plasticity. The resulting synaptic TFTs achieve pA-level off-state currents and gate-programmable paired-pulse facilitation tunable from 163% to 112%. Building on this gate-tunable defect-mediated photoresponse, we design a simulated 20 × 20 pixel-level adaptive preprocessing array in which calibration-based dynamic gate-bias control enables physical-layer gain modulation to mitigate overexposure and enhance underexposed signals. This device-assisted physical-layer preprocessing yields a 5.8 dB improvement in peak signal-to-noise ratio and a 0.29 gain in the structural similarity index, restoring downstream machine-vision accuracy by 30.56 percentage points. Furthermore, exploiting the intrinsic fading memory of the defect-engineered ZnO channel, in-sensor physical reservoir computing is realized with a 96.58% recognition accuracy on the MNIST data set. This material-engineered strategy offers a potential pathway toward robust visual perception in unpredictable optical environments for wearable-compatible electronics.

ACS Applied Nano Materials
National University of Defense Technology (CN)
National Natural Science Foundation of China, Science and Technology Program of Hunan Province, National Key Research and Development Program of China
Openalex Percentile: Top 15%
Advanced Memory and Neural Computing
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