Reversed Förster Resonance Energy Transfer in ReS <sub>2</sub> -Based Heterostructures

Energy transfer (ET) is central to energy-harvesting and optoelectronic technologies. Conventional Förster resonance energy transfer (FRET) requires substantial spectral overlap between donor emission and acceptor absorption and downhill energy flow. Here, we demonstrate an unconventional FRET process that operates without spectral overlap and enables energy transfer from lower-energy donors to higher-energy acceptors. In ReS 2 /hBN/TMD (TMD = WSe 2, WS 2, and MoS 2 ) heterostructures, efficient ET occurs from ReS 2 to TMD monolayers despite the lower excitonic energies of ReS 2 . This reversed FRET originates from high energy excitonic states at the K and M valleys of ReS 2 arising from the band-nesting effect, as supported by transient absorption spectroscopy. As a result, over 30-fold photoluminescence enhancement, more than 63% transfer efficiency, and sub-80 ps transfer time are achieved, outperforming most reported systems. Our findings open an unexplored route for engineering interlayer energy flow and enhancing quantum yield low-dimensional materials.

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Publication Details

Journal
Nano Letters
Published
2026-07-16
DOI
https://doi.org/10.1021/acs.nanolett.6c02616
Primary Topic
2D Materials and Applications
Type
article
Field-Weighted Citation Impact
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article

Reversed Förster Resonance Energy Transfer in ReS 2 -Based Heterostructures

Xiangxin Gong, Yuhui Yang, Qingyun Wu, Rui Yu et al.
Nano Letters
2D Materials and Applications
article

Reversed Förster Resonance Energy Transfer in ReS 2 -Based Heterostructures

Xiangxin Gong, Yuhui Yang, Qingyun Wu, Rui Yu, Takashi Taniguchi, Kenji Watanabe, Sang Hoon Chae, Haiming Zhu, Weibo Gao, L. K. Ang, Shi Guo, Sung-Gyu Lee, Xuran Dai, Cheng Sun
article en

Abstract

Energy transfer (ET) is central to energy-harvesting and optoelectronic technologies. Conventional Förster resonance energy transfer (FRET) requires substantial spectral overlap between donor emission and acceptor absorption and downhill energy flow. Here, we demonstrate an unconventional FRET process that operates without spectral overlap and enables energy transfer from lower-energy donors to higher-energy acceptors. In ReS 2 /hBN/TMD (TMD = WSe 2, WS 2, and MoS 2 ) heterostructures, efficient ET occurs from ReS 2 to TMD monolayers despite the lower excitonic energies of ReS 2 . This reversed FRET originates from high energy excitonic states at the K and M valleys of ReS 2 arising from the band-nesting effect, as supported by transient absorption spectroscopy. As a result, over 30-fold photoluminescence enhancement, more than 63% transfer efficiency, and sub-80 ps transfer time are achieved, outperforming most reported systems. Our findings open an unexplored route for engineering interlayer energy flow and enhancing quantum yield low-dimensional materials.

Nano Letters
Singapore University of Technology and Design (SG), Nanyang Technological University (SG), National Institute for Materials Science (JP), Zhejiang University (CN)
Affordable and clean energy
Openalex Percentile: Top 19%
2D Materials and Applications
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