Surface Acoustic Wave-Guided Reconfigurable Memristor

Neuromorphic computing requires memory elements that can emulate both nonvolatile and volatile operation. However, achieving reconfigurability without trade-offs in performance or device fatigue remains a critical challenge. Conventional electrically driven memristors face difficulties in maintaining repetitive volatile states while preserving their nonvolatile state, which poses a major challenge for achieving reliable reconfigurability. Here, we report a surface acoustic wave (SAW)-stimulated memristor using a two-dimensional (2D) transition metal dichalcogenide monolayer MoS 2 that achieves reconfigurable memory operation in a reversible volatile mode enabled by acousto-electric modulation. SAW excitation provides contactless, strain-based control of the 2D material conductance for memristor operation, allowing dynamic and nondestructive volatile behavior without deteriorating the electrically programmed nonvolatile state. We leverage these tunable temporal dynamics to realize a SAW-driven memristive reservoir based on 2D monolayer MoS 2, achieving 96.1% accuracy in a character classification task.

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Publication Details

Journal
ACS Nano
Published
2026-07-16
DOI
https://doi.org/10.1021/acsnano.6c01958
Primary Topic
Advanced Memory and Neural Computing
Type
article
Field-Weighted Citation Impact
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article

Surface Acoustic Wave-Guided Reconfigurable Memristor

T H Kim, Ki Kang Kim, Hyeong Chan Suh, 류현승 et al.
ACS Nano
Advanced Memory and Neural Computing
article

Surface Acoustic Wave-Guided Reconfigurable Memristor

T H Kim, Ki Kang Kim, Hyeong Chan Suh, 류현승, Il Jeon, Keekeun Lee, Mun Seok Jeong, S K Kim, D K Kim, Jeong‐Seok Nam, Vincent Tung, Sungjoo Lee, Hayoung Ko, Y. H. Ahn, Soo Ho Choi, Ilya V. Novikov, Young Chul Kim, Jang Woo Lee, Kai Qi
article en

Abstract

Neuromorphic computing requires memory elements that can emulate both nonvolatile and volatile operation. However, achieving reconfigurability without trade-offs in performance or device fatigue remains a critical challenge. Conventional electrically driven memristors face difficulties in maintaining repetitive volatile states while preserving their nonvolatile state, which poses a major challenge for achieving reliable reconfigurability. Here, we report a surface acoustic wave (SAW)-stimulated memristor using a two-dimensional (2D) transition metal dichalcogenide monolayer MoS 2 that achieves reconfigurable memory operation in a reversible volatile mode enabled by acousto-electric modulation. SAW excitation provides contactless, strain-based control of the 2D material conductance for memristor operation, allowing dynamic and nondestructive volatile behavior without deteriorating the electrically programmed nonvolatile state. We leverage these tunable temporal dynamics to realize a SAW-driven memristive reservoir based on 2D monolayer MoS 2, achieving 96.1% accuracy in a character classification task.

ACS Nano
ON Semiconductor (United States) (US), University of Illinois Urbana-Champaign (US), The University of Texas at Dallas (US), Tohoku University (JP), University of Illinois Chicago (US), Nanomaterials Research (United States) (US), Institute of Nanotechnology (GB), Centre for Global Health Research (CA), Hanyang University (KR), Ajou University (KR), The University of Tokyo (JP), Sungkyunkwan University (KR)
Openalex Percentile: Top 15%
Advanced Memory and Neural Computing
DOISourceOpenAlex
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