Engineering topology by design in two-dimensional materials

Two-dimensional topological insulators (2D TIs) have emerged as a cornerstone of next-generation spintronic technologies due to their robust, dissipationless edge states protected by time-reversal symmetry. Initial realizations of 2D TIs have primarily focused on materials with strong intrinsic spin-orbit coupling capable of driving band inversion, an approach that significantly constrains the accessible materials landscape. More recently, a paradigm shift has occurred toward engineering topological phases in van der Waals (vdW) heterostructures, where nontrivial band topology can arise from interfacial coupling rather than relying solely on intrinsic material properties. This framework provides an exceptionally versatile platform with multiple tunable degrees of freedom, including stacking configuration, twist angle, and chemical functionalization, allowing systematic manipulation of the band topology. Furthermore, external stimuli, such as electric fields, strain, and light-matter coupling, enable dynamic and reversible control of the topological character. The combined use of vdW interface engineering and external modulation allows the realization of 2D TI phases even in otherwise topologically trivial systems, substantially expanding the accessible materials landscape. This Research Update reviews key milestones in the development of vdW-engineered 2D topological quantum materials, critically assesses outstanding theoretical and experimental challenges, and outlines promising directions for future breakthroughs.

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Publication Details

Journal
Physical Review Materials
Published
2026-10-29
DOI
https://doi.org/10.1103/yx43-b5mm
Primary Topic
Topological Materials and Phenomena
Type
article
Field-Weighted Citation Impact
0.00

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article

Engineering topology by design in two-dimensional materials

Arjyama Bordoloi, Sobhit Singh
1 links
Physical Review Materials
Topological Materials and Phenomena
article

Engineering topology by design in two-dimensional materials

Arjyama Bordoloi, Sobhit Singh
article en

Abstract

Two-dimensional topological insulators (2D TIs) have emerged as a cornerstone of next-generation spintronic technologies due to their robust, dissipationless edge states protected by time-reversal symmetry. Initial realizations of 2D TIs have primarily focused on materials with strong intrinsic spin-orbit coupling capable of driving band inversion, an approach that significantly constrains the accessible materials landscape. More recently, a paradigm shift has occurred toward engineering topological phases in van der Waals (vdW) heterostructures, where nontrivial band topology can arise from interfacial coupling rather than relying solely on intrinsic material properties. This framework provides an exceptionally versatile platform with multiple tunable degrees of freedom, including stacking configuration, twist angle, and chemical functionalization, allowing systematic manipulation of the band topology. Furthermore, external stimuli, such as electric fields, strain, and light-matter coupling, enable dynamic and reversible control of the topological character. The combined use of vdW interface engineering and external modulation allows the realization of 2D TI phases even in otherwise topologically trivial systems, substantially expanding the accessible materials landscape. This Research Update reviews key milestones in the development of vdW-engineered 2D topological quantum materials, critically assesses outstanding theoretical and experimental challenges, and outlines promising directions for future breakthroughs.

Physical Review MaterialsVol. 10(10)
University of Rochester (US)
National Science Foundation, U.S. Department of Energy, University of Rochester, Office of Science, Office of Advanced Cyberinfrastructure, Fusion Energy Sciences
Openalex Percentile: Top 52%
Topological Materials and Phenomena
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Engineering topology by design in two-dimensional materials — Arjyama Bordoloi, Sobhit Singh · Physical Review Materials (2026) | TGRS Research Map | TGRS