Multifunctional and programmable transistors with ferroelectric CuInP2S6/MoS2 heterojunctions

Two-dimensional ferroelectric van der Waals heterojunctions offer high-density integration and superior performance in devices, facilitating efficient information storage and manipulation. However, their digital/analog computing architectures remain insufficiently explored. Here, we develop multi-gate ferroelectric field-effect transistors using the CuInP 2 S 6 /MoS 2 heterostructure. The devices operate as programmable rectifiers, content-addressable memory units, and electrically programmable Boolean logic gates. By leveraging the multi-gate ferroelectric layer for efficient channel conductivity modulation, we achieve an on/off ratio of 10 6 , a subthreshold swing of 45.1 mV/dec, and a drain current as low as 10 −11 A, demonstrating device stability and low power. As a programmable rectifier, the devices exhibit a rectification ratio of 10 4 . Their asymmetric polarization control at each channel end enables distinct switching behaviors and parallel data search. Furthermore, incorporating controlled-NOT (CNOT)-like logic into ferroelectric circuits enables adaptable, time-constrained weight-update kernels, achieving 96% accuracy in efficient handwritten digit recognition. This hybrid approach paves the way for multifunctional, electrically programmable devices with smaller footprints, low-power consumption, and high-density chip integration.