Multiferroic Studies of RMnO ₃ [R = Y, Er, Yb] Hexamanganites Thin Films

High Resolution Image Download MS PowerPoint Slide Stable, nontoxic, and cost-effective hexagonal RMnO 3 (R = Y, Er, Yb) thin films were synthesized via spray pyrolysis and optimized for structural quality. The hexagonal structure and dense surface morphology were confirmed by X-ray diffraction (XRD) and scanning electron microscopy (SEM), consistent with our previous study. Detailed magnetic and ferroelectric characterizations were carried out. All films exhibited clear paramagnetic-to-antiferromagnetic (AFM) transitions. The Neel temperature of all the samples was determined. Room temperature Polarization–Electric field (P–E) hysteresis loops confirmed leaky ferroelectric behavior, influenced by internal bias fields and defect structures. The results demonstrate the coexistence of magnetic and ferroelectric orderings in stable oxide multiferroic material RMnO 3 thin films, underscoring their potential as multiferroic materials for future applications in magnetoelectric sensors, nonvolatile memories, and spintronic devices.