Engineering oxide-structured niobium composites via atomic layer deposition and spark plasma sintering

The precise control of nanoscale oxide dispersions offers a promising route to improve the mechanical performance of refractory metal systems. This study employs an atomic layer deposition (ALD)-based approach to deposit conformal TiO 2 nanocoatings on pure niobium powder surfaces using a rotary reactor, followed by densification via spark plasma sintering (SPS). During SPS consolidation, amorphous TiO 2 shells undergo phase transformation and redistribution, yielding crystalline rutile TiO 2 nanoparticles (10–20 nm) and interfacial Nb–Ti–O composite oxide phases localized along grain boundaries. Multiscale characterization confirms the spatial segregation and microstructural distribution of these phases. The ALD-derived oxide dispersoids suppress grain growth and impede dislocation motion, increasing hardness by up to 43 % in oxide-rich regions, as measured through nanoindentation. This strengthening arises from grain-boundary pinning, particle–dislocation interactions, and interfacial oxide stabilization, with the formation of Nb–Ti–O composite phases playing a notable role alongside discrete TiO 2 dispersoids. This study presents a scalable, contamination-free surface engineering strategy for fabricating nanostructured Nb-based composites with refined microstructures and enhanced room-temperature mechanical response. The approach offers a viable processing platform for refractory metal systems, with potential extension to high-temperature structural applications pending future thermal aging and mechanical evaluation at elevated temperatures .

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Publication Details

Journal
Materials & Design
Published
2026-07-02
DOI
https://doi.org/10.1016/j.matdes.2026.116547
Primary Topic
Semiconductor materials and devices
Type
article
Field-Weighted Citation Impact
0.00

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article

Engineering oxide-structured niobium composites via atomic layer deposition and spark plasma sintering

Byoungchul Hwang, Jongmin Byun, Ji Young Park, Byung Joon Choi et al.
Materials & Design
Semiconductor materials and devices
article

Engineering oxide-structured niobium composites via atomic layer deposition and spark plasma sintering

Byoungchul Hwang, Jongmin Byun, Ji Young Park, Byung Joon Choi, Seung-Hyeok Shin
article en

Abstract

The precise control of nanoscale oxide dispersions offers a promising route to improve the mechanical performance of refractory metal systems. This study employs an atomic layer deposition (ALD)-based approach to deposit conformal TiO 2 nanocoatings on pure niobium powder surfaces using a rotary reactor, followed by densification via spark plasma sintering (SPS). During SPS consolidation, amorphous TiO 2 shells undergo phase transformation and redistribution, yielding crystalline rutile TiO 2 nanoparticles (10–20 nm) and interfacial Nb–Ti–O composite oxide phases localized along grain boundaries. Multiscale characterization confirms the spatial segregation and microstructural distribution of these phases. The ALD-derived oxide dispersoids suppress grain growth and impede dislocation motion, increasing hardness by up to 43 % in oxide-rich regions, as measured through nanoindentation. This strengthening arises from grain-boundary pinning, particle–dislocation interactions, and interfacial oxide stabilization, with the formation of Nb–Ti–O composite phases playing a notable role alongside discrete TiO 2 dispersoids. This study presents a scalable, contamination-free surface engineering strategy for fabricating nanostructured Nb-based composites with refined microstructures and enhanced room-temperature mechanical response. The approach offers a viable processing platform for refractory metal systems, with potential extension to high-temperature structural applications pending future thermal aging and mechanical evaluation at elevated temperatures .

Materials & DesignVol. 268
Seoul National University of Science and Technology (KR)
National Research Foundation of Korea, Korea Evaluation Institute of Industrial Technology
Openalex Percentile: Top 12%
Semiconductor materials and devices
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