Alternating atomic-dipole layers and switching dynamics in Al <sub>1-x</sub> Sc <sub>x</sub> N ferroelectrics
N ferroelectrics exhibit exceptional polarization and thermal stability, making them highly promising for a wide range of electronic applications. However, a more profound understanding is required regarding the atomic-scale mechanism through which cation substitution lowers the switching energy barrier and thus reduces the coercive field. We used spherical aberration-corrected transmission electron microscopy to reveal a periodic modulation of cation-anion spacing along the polarization direction, forming alternating atomic dipole layers. This modulation arises from energetically favorable chemical ordering of aluminum and scandium atoms between adjacent layers, with layer-resolved asymmetry in atomic arrangement. In situ imaging directly captures atomic-scale, noncollective, stepwise polarization switching, revealing intermediate states and local spacing fluctuations. Compositional inhomogeneity in these dipole layers creates multiple transient states that reduce the switching energy barrier. Our findings connect atomic-scale dipole structures to polarization switching kinetics, enabling the rational design of wurtzite ferroelectrics.
Authors
- Ruirong Bai (ORCID: https://orcid.org/0009-0008-1695-0728)
- He Tian (ORCID: https://orcid.org/0000-0003-2108-3100)
- Yu‐Ning Wu (ORCID: https://orcid.org/0000-0003-3970-3160)
- Yan Cheng (ORCID: https://orcid.org/0000-0002-0067-2646)
- Xuanyu Zhao (ORCID: https://orcid.org/0000-0002-6281-2325)
- Yingfen Wei (ORCID: https://orcid.org/0000-0003-2037-4440)
- Binghui Ge (ORCID: https://orcid.org/0000-0002-6470-6278)
- Yonghui Zheng (ORCID: https://orcid.org/0000-0002-0826-0320)
- Tianjiao Xin (ORCID: https://orcid.org/0009-0002-5032-4137)
- Chun‐Gang Duan (ORCID: https://orcid.org/0000-0002-5380-4980)
- Shiyou Chen (ORCID: https://orcid.org/0000-0002-4039-8549)
- Ming Liu (ORCID: https://orcid.org/0000-0002-0937-7547)
- Qi Liu (ORCID: https://orcid.org/0000-0001-7062-831X)
Institutions
- Anhui University (CN)
- Fudan University (CN)
- Institute of Microelectronics (CN)
- East China Normal University (CN)
- Zhejiang University (CN)
Publication Details
- Journal
- Science
- Published
- 2026-07-02
- DOI
- https://doi.org/10.1126/science.aee9639
- Primary Topic
- Ferroelectric and Piezoelectric Materials
- Type
- article
- Field-Weighted Citation Impact
- 0.00
Funders
- National Natural Science Foundation of China
- Shanghai Municipal Education Commission