Electrical Transport Mechanisms in Silver Nanoparticles Doped Graphene Quantum Dots /p-Si Diode

A novel heterojunction device was fabricated by incorporating silver nanoparticles doped, polyethyleneimine functionalized nitrogen-doped graphene quantum dots (Ag-GQDs) onto p-type silicon via a simple and eco-friendly synthesis method. Electrical characterization under dark conditions yielded a barrier height of 0.71 eV, a series resistance of 260 Ω, and an ideality factor of 5.61 for the Ag-doped diode, suggesting the presence of interfacial traps or structural irregularities. The rectification ratio (RR) measured at ±5 V was 9.4 × 10³. The results indicate that the proposed nanocomposite is well suited for diode applications, where its interfacial properties and charge transport characteristics play a key role in determining device performance.