Coated and Hybrid Silicon Carbide Nanowires: Advanced Surface Engineering, Interface Control and Functional Applications

Silicon carbide (SiC) nanowires possess unique one-dimensional structural features, excellent mechanical strength, thermal stability and wide bandgap properties, showing great potential in high-temperature electronics, catalysis, sensing and composite reinforcement. Nevertheless, pristine SiC nanowires suffer from inert surface activity, weak interfacial compatibility and limited optoelectronic and catalytic performance. Surface coating and heterojunction engineering are effective strategies to address these deficiencies. This review systematically summarizes the synthesis routes of pristine SiC nanowires, including carbothermal reduction, chemical vapor deposition, template-assisted growth and molten salt synthesis, as well as their morphological regulation, physicochemical properties and inherent limitations. Meanwhile, typical coating methods such as wet chemical, hydrothermal, CVD and PIP are elaborated, and the influences of coating thickness, uniformity, adhesion and lattice/thermal compatibility on performance are summarized. The classification and interfacial charge mechanism of Type II, Z-scheme and Schottky heterojunctions are discussed, and the advances of coated SiC nanowires in photodetection, photocatalysis, gas sensing, electromagnetic shielding and energy storage are reviewed. Current challenges including coating stability, scalable preparation and integration bottlenecks are pointed out, and future research directions focusing on interface control, multifunctional integration and AI-assisted material design are prospected.

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Publication Details

Journal
Colloids and Interfaces
Published
2026-06-30
DOI
https://doi.org/10.3390/colloids10040050
Primary Topic
Silicon Carbide Semiconductor Technologies
Type
article
Field-Weighted Citation Impact
0.00

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article

Coated and Hybrid Silicon Carbide Nanowires: Advanced Surface Engineering, Interface Control and Functional Applications

J Y Chen, Bin Li, Minahil Ishtiaq, Yuanhui Liu et al.
Colloids and Interfaces
Silicon Carbide Semiconductor Technologies
article

Coated and Hybrid Silicon Carbide Nanowires: Advanced Surface Engineering, Interface Control and Functional Applications

J Y Chen, Bin Li, Minahil Ishtiaq, Yuanhui Liu, Huan Lin, Xiaoyu Shen, Bo Zhang
article en

Abstract

Silicon carbide (SiC) nanowires possess unique one-dimensional structural features, excellent mechanical strength, thermal stability and wide bandgap properties, showing great potential in high-temperature electronics, catalysis, sensing and composite reinforcement. Nevertheless, pristine SiC nanowires suffer from inert surface activity, weak interfacial compatibility and limited optoelectronic and catalytic performance. Surface coating and heterojunction engineering are effective strategies to address these deficiencies. This review systematically summarizes the synthesis routes of pristine SiC nanowires, including carbothermal reduction, chemical vapor deposition, template-assisted growth and molten salt synthesis, as well as their morphological regulation, physicochemical properties and inherent limitations. Meanwhile, typical coating methods such as wet chemical, hydrothermal, CVD and PIP are elaborated, and the influences of coating thickness, uniformity, adhesion and lattice/thermal compatibility on performance are summarized. The classification and interfacial charge mechanism of Type II, Z-scheme and Schottky heterojunctions are discussed, and the advances of coated SiC nanowires in photodetection, photocatalysis, gas sensing, electromagnetic shielding and energy storage are reviewed. Current challenges including coating stability, scalable preparation and integration bottlenecks are pointed out, and future research directions focusing on interface control, multifunctional integration and AI-assisted material design are prospected.

Colloids and InterfacesVol. 10(4)
Institute of New Materials (CN), University of Science and Technology Beijing (CN)
National Natural Science Foundation of China
Openalex Percentile: Top 12%
Silicon Carbide Semiconductor Technologies
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