Short‐Wave Infrared Organic Photodetectors With Ultralow Dark Current Density Under Biased Operating Conditions

ABSTRACT Commercial photodetectors integrated on readout circuits typically operate under bias voltage, necessitating low dark current density ( J d ) to achieve high detectivity. However, suppressing J d remains a critical challenge for organic photodetectors (OPDs), particularly those operating in the short‐wave infrared (SWIR) region. Herein, we report SWIR‐OPDs that achieve ultralow J d under high bias voltage by developing a narrow bandgap p‐type polymer as the SWIR absorber, thereby establishing an alternative material platform for high‐performance SWIR‐OPDs. The new polymer PDCBT‐DTO2F adopts a push‐pull architecture comprising quaterthiophene donor units and 5,6‐dicyano‐2,1,3‐benzothiadiazole acceptor moieties. Substituting the alkyl chains on quaterthiophene units with alkoxy chains significantly enhanced the intramolecular charge transfer effect and backbone coplanarity. This modification simultaneously yielded intense SWIR absorption, high crystallinity, reduced trap density, and low energetic disorder. Through extensive device optimization, the SWIR‐OPD based on PDCBT‐DTO2F exhibited J d as low as 15.6 nA cm – 2 under −2 V and 58.1 nA cm −2 even under −5 V. Consequently, a detectivity of 1.04 × 10 12 Jones was realized at 1100 nm under −2 V bias, ranking among the best performance for SWIR‐OPDs operating under reverse bias.

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Publication Details

Journal
Advanced Materials
Published
2026-06-30
DOI
https://doi.org/10.1002/adma.73895
Primary Topic
Organic Electronics and Photovoltaics
Type
article
Field-Weighted Citation Impact
0.00

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article

Short‐Wave Infrared Organic Photodetectors With Ultralow Dark Current Density Under Biased Operating Conditions

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Advanced Materials
Organic Electronics and Photovoltaics
article

Short‐Wave Infrared Organic Photodetectors With Ultralow Dark Current Density Under Biased Operating Conditions

Changduk Yang, Chunhui Duan, Seunglok Lee, Jiaying Wu, Baoqi Wu, Yanjun Fang, Kangzhe Liu, Ashlie J. McIvor, Zhaochen Lv, Mingqun Yang, Sha Liu, Fei Huang, Yihui Chen, Yunhao Cao, H W Wu, Yi-Xiang Wang, Yong Cao, Xiang Luo, Bingyan Yin
article en

Abstract

ABSTRACT Commercial photodetectors integrated on readout circuits typically operate under bias voltage, necessitating low dark current density ( J d ) to achieve high detectivity. However, suppressing J d remains a critical challenge for organic photodetectors (OPDs), particularly those operating in the short‐wave infrared (SWIR) region. Herein, we report SWIR‐OPDs that achieve ultralow J d under high bias voltage by developing a narrow bandgap p‐type polymer as the SWIR absorber, thereby establishing an alternative material platform for high‐performance SWIR‐OPDs. The new polymer PDCBT‐DTO2F adopts a push‐pull architecture comprising quaterthiophene donor units and 5,6‐dicyano‐2,1,3‐benzothiadiazole acceptor moieties. Substituting the alkyl chains on quaterthiophene units with alkoxy chains significantly enhanced the intramolecular charge transfer effect and backbone coplanarity. This modification simultaneously yielded intense SWIR absorption, high crystallinity, reduced trap density, and low energetic disorder. Through extensive device optimization, the SWIR‐OPD based on PDCBT‐DTO2F exhibited J d as low as 15.6 nA cm – 2 under −2 V and 58.1 nA cm −2 even under −5 V. Consequently, a detectivity of 1.04 × 10 12 Jones was realized at 1100 nm under −2 V bias, ranking among the best performance for SWIR‐OPDs operating under reverse bias.

Advanced Materials
Dongguan University of Technology (CN), Guangzhou Institute of Advanced Technology (CN), Centre of Excellence for Advanced Materials (CN), Ulsan National Institute of Science and Technology (KR), Zhejiang University (CN), University of Hong Kong (HK), South China University of Technology (CN)
National Natural Science Foundation of China, China Postdoctoral Science Foundation, National Research Foundation of Korea, Guangzhou Municipal Science and Technology Bureau, National Key Research and Development Program of China, Basic and Applied Basic Research Foundation of Guangdong Province
Openalex Percentile: Top 12%
Organic Electronics and Photovoltaics
DOISourceOpenAlex
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