Significant red-emission enhancement using column-top-exposed InGaN-based nanocolumn plasmonic crystals with honeycomb lattice
Red emission remains a major bottleneck for practical full-color micro-light-emitting diodes (microLEDs) because the quantum efficiencies of InGaN decrease in the long-wavelength region. To enhance red emission, this study developed a honeycomb-latticed InGaN/GaN nanocolumn array integrated with an Ag-based plasmonic LED structure. Finite-difference time-domain simulations were used to optimize the lattice parameters, identifying a = 220 nm and D = 190 nm as the optimal geometries. This design provided an electric-field enhancement of approximately 4.5 at λ = 623 nm, indicating strong surface plasmon polariton coupling in the red region. A device fabricated with the same parameters exhibited up to a 6.3-fold photoluminescence enhancement under surface excitation, outperforming the 5.9-fold enhancement previously achieved under backside excitation. These results demonstrate that honeycomb-latticed plasmonic engineering is effective for boosting red emission in InGaN-based structures and offers a promising route to high-efficiency red microLEDs.
Authors
- Hiroto Otsuka
- Koichi Okamoto (ORCID: https://orcid.org/0000-0002-2658-3000)
- Rie Togashi (ORCID: https://orcid.org/0000-0002-9467-0755)
- Takao Oto (ORCID: https://orcid.org/0000-0003-1102-7754)
- Kyohei Koseki (ORCID: https://orcid.org/0000-0002-5856-3151)
- Jumpei Yamada (ORCID: https://orcid.org/0000-0001-9322-1440)
- Katsumi Kishino (ORCID: https://orcid.org/0000-0002-6788-5734)
- Ryoma Shirotori (ORCID: https://orcid.org/0009-0003-1024-472X)
Institutions
- Yamagata University (JP)
- Osaka Prefecture University (JP)
- Sophia University (JP)
Publication Details
- Journal
- Applied Physics Letters
- Published
- 2026-06-29
- DOI
- https://doi.org/10.1063/5.0331716
- Primary Topic
- GaN-based semiconductor devices and materials
- Type
- article
- Field-Weighted Citation Impact
- 0.00