Significant red-emission enhancement using column-top-exposed InGaN-based nanocolumn plasmonic crystals with honeycomb lattice

Red emission remains a major bottleneck for practical full-color micro-light-emitting diodes (microLEDs) because the quantum efficiencies of InGaN decrease in the long-wavelength region. To enhance red emission, this study developed a honeycomb-latticed InGaN/GaN nanocolumn array integrated with an Ag-based plasmonic LED structure. Finite-difference time-domain simulations were used to optimize the lattice parameters, identifying a = 220 nm and D = 190 nm as the optimal geometries. This design provided an electric-field enhancement of approximately 4.5 at λ = 623 nm, indicating strong surface plasmon polariton coupling in the red region. A device fabricated with the same parameters exhibited up to a 6.3-fold photoluminescence enhancement under surface excitation, outperforming the 5.9-fold enhancement previously achieved under backside excitation. These results demonstrate that honeycomb-latticed plasmonic engineering is effective for boosting red emission in InGaN-based structures and offers a promising route to high-efficiency red microLEDs.

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Publication Details

Journal
Applied Physics Letters
Published
2026-06-29
DOI
https://doi.org/10.1063/5.0331716
Primary Topic
GaN-based semiconductor devices and materials
Type
article
Field-Weighted Citation Impact
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article

Significant red-emission enhancement using column-top-exposed InGaN-based nanocolumn plasmonic crystals with honeycomb lattice

Hiroto Otsuka, Koichi Okamoto, Rie Togashi, Takao Oto et al.
Applied Physics Letters
GaN-based semiconductor devices and materials
article

Significant red-emission enhancement using column-top-exposed InGaN-based nanocolumn plasmonic crystals with honeycomb lattice

Hiroto Otsuka, Koichi Okamoto, Rie Togashi, Takao Oto, Kyohei Koseki, Jumpei Yamada, Katsumi Kishino, Ryoma Shirotori
article en

Abstract

Red emission remains a major bottleneck for practical full-color micro-light-emitting diodes (microLEDs) because the quantum efficiencies of InGaN decrease in the long-wavelength region. To enhance red emission, this study developed a honeycomb-latticed InGaN/GaN nanocolumn array integrated with an Ag-based plasmonic LED structure. Finite-difference time-domain simulations were used to optimize the lattice parameters, identifying a = 220 nm and D = 190 nm as the optimal geometries. This design provided an electric-field enhancement of approximately 4.5 at λ = 623 nm, indicating strong surface plasmon polariton coupling in the red region. A device fabricated with the same parameters exhibited up to a 6.3-fold photoluminescence enhancement under surface excitation, outperforming the 5.9-fold enhancement previously achieved under backside excitation. These results demonstrate that honeycomb-latticed plasmonic engineering is effective for boosting red emission in InGaN-based structures and offers a promising route to high-efficiency red microLEDs.

Applied Physics LettersVol. 128(26)
Yamagata University (JP), Osaka Prefecture University (JP), Sophia University (JP)
Affordable and clean energy
Openalex Percentile: Top 9%
GaN-based semiconductor devices and materials
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Significant red-emission enhancement using column-top-exposed InGaN-based nanocolumn plasmonic crystals with honeycomb lattice — Hiroto Otsuka, Koichi Okamoto, et al. · Applied Physics Letters (2026) | TGRS Research Map | TGRS