Proton irradiation-induced dark current and RTS on InGaAs infrared focal plane array
In this study, the proton-induced increase in dark current and the production of random telegraph signal (RTS) in InGaAs infrared focal plane array (IR FPA) are investigated. We note that InGaAs FPA has a high sensitivity to proton-induced displacement damage. After 1 × 1011 p+/cm2 proton irradiation, the dark current distribution with a Gaussian shape and a universal damage factor (UDF) of 1136 e-/s/µm3/(TeV/g) is obtained. The statistical distribution results of the RTS at different proton fluences, integration time and temperatures are also summarized. In addition, a special class of spine-RTS is discussed with respect to its characteristics and causes. The annealing trend of FPA dark current and the RTS evolution of several pixels indicate complex changes in cluster defects.
Authors
- B Liu
- Yuxia Li (ORCID: https://orcid.org/0009-0002-4723-4915)
- Dong Zhou (ORCID: https://orcid.org/0000-0002-5436-6177)
- Bin Wang (ORCID: https://orcid.org/0000-0001-9576-2646)
- Zhihui Shen (ORCID: https://orcid.org/0009-0006-3879-4151)
- Guo Q
- Lin Wen
Institutions
- Chinese Academy of Sciences (CN)
- Electronics Research Institute (EG)
- University of Chinese Academy of Sciences (CN)
Publication Details
- Journal
- Radiation effects and defects in solids
- Published
- 2026-06-30
- DOI
- https://doi.org/10.1080/10420150.2026.2692383
- Primary Topic
- CCD and CMOS Imaging Sensors
- Type
- article
- Field-Weighted Citation Impact
- 0.00
Funders
- Science and Technology Department of Xinjiang Uygur Autonomous Region
- National Natural Science Foundation of China
- Youth Innovation Promotion Association of the Chinese Academy of Sciences
- Xingjiang Uighur Autonomous Region Talent Project