Resistive switching in large-scale MoS2 grown on Ag(111)

Among the many applications in which 2D materials are expected to provide technological advances, recently the discovery of non-volatile resistive switching places them as valuable candidates for future brain-inspired neuromorphic computing or data storage devices. As per other fields, the need for large-scale grown 2D materials, mostly transition metal dichalcogenides, is a key-aspect for the lab-to-fab transition. Here, pulsed laser deposition of MoS2 onto Ag(111) in different environments is implemented as a viable route to obtain the direct growth of the active layer on the metallic electrode. Raman spectroscopy and conductive atomic force microscopy are carried out to check the crystal quality on the cm2 scale and investigate the local electronic properties, respectively. Large-scale growth and resistive switching mechanism are demonstrated, suggesting a critical role of the MoS2/Ag interface depending on the surface preparation and water intercalation in ambient conditions. In a device fabrication-oriented perspective, such aspects should be carefully considered to achieve the best conditions for device operation.