Sub‐Terahertz Memristor Switches Using MoS <sub>2</sub> by Liquid–Liquid Interface Assembly

ABSTRACT This study demonstrates the first application‐ready radio‐frequency (RF) switches based on memristors fabricated via electrochemical exfoliation and liquid–liquid interfacial assembly. This 2D layer deposition method produces uniform, low‐defect bilayer molybdenum disulfide (MoS 2 ) nanosheet networks without the high temperatures or hazardous gases typical of chemical vapor deposition, providing a low‐cost, environmentally friendly route toward CMOS‐compatible integration. The resulting devices exhibit robust unipolar resistive switching, simplifying biasing and lowering power consumption compared to bipolar solutions. Devices show reproducibility with 10 4 s retention and 100‐cycle endurance. RF characterization confirms reliable operation across 10–110 GHz with low insertion loss (0.42–0.9 dB), isolation above 18 dB, and an intrinsic cut‐off frequency of ∼5.4 THz. The viability for integration into energy‐efficient wireless communication platforms is assessed by simulation of a 24 × 24 elements reconfigurable intelligent surface. High gain (&gt;21.6 dBi) and efficient beam steering (−60°–60°) across the 26.8–29.1 GHz band demonstrate the utility of these novel non‐volatile RF switches in next‐generation mmWave communication, including 5G/6G and satellite systems.

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Publication Details

Journal
Advanced Science
Published
2026-06-29
DOI
https://doi.org/10.1002/advs.75909
Primary Topic
MXene and MAX Phase Materials
Type
article
Field-Weighted Citation Impact
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article

Sub‐Terahertz Memristor Switches Using MoS 2 by Liquid–Liquid Interface Assembly

Joseph Neilson, Jonathan N. Coleman, J. Caldinhas Vaz, Antonio Clemente et al.
Advanced Science
MXene and MAX Phase Materials
article

Sub‐Terahertz Memristor Switches Using MoS 2 by Liquid–Liquid Interface Assembly

Joseph Neilson, Jonathan N. Coleman, J. Caldinhas Vaz, Antonio Clemente, L. M. Pessoa, Sérgio A. Matos, Zdeněk Sofer, Jonas Deuermeier, Adam G. Kelly, Asal Kiazadeh, Rodrigo Martins, Elvira M. C. Fortunato, Tomás Mingates, Luís Mendes, Mohamed E. Ghatas, Luca Lucci
article en

Abstract

ABSTRACT This study demonstrates the first application‐ready radio‐frequency (RF) switches based on memristors fabricated via electrochemical exfoliation and liquid–liquid interfacial assembly. This 2D layer deposition method produces uniform, low‐defect bilayer molybdenum disulfide (MoS 2 ) nanosheet networks without the high temperatures or hazardous gases typical of chemical vapor deposition, providing a low‐cost, environmentally friendly route toward CMOS‐compatible integration. The resulting devices exhibit robust unipolar resistive switching, simplifying biasing and lowering power consumption compared to bipolar solutions. Devices show reproducibility with 10 4 s retention and 100‐cycle endurance. RF characterization confirms reliable operation across 10–110 GHz with low insertion loss (0.42–0.9 dB), isolation above 18 dB, and an intrinsic cut‐off frequency of ∼5.4 THz. The viability for integration into energy‐efficient wireless communication platforms is assessed by simulation of a 24 × 24 elements reconfigurable intelligent surface. High gain (&gt;21.6 dBi) and efficient beam steering (−60°–60°) across the 26.8–29.1 GHz band demonstrate the utility of these novel non‐volatile RF switches in next‐generation mmWave communication, including 5G/6G and satellite systems.

Advanced Science
Instituto Politécnico de Leiria (PT), Trinity College Dublin (IE), Commissariat à l'Énergie Atomique et aux Énergies Alternatives (FR), CEA Grenoble (FR), Advanced Materials and BioEngineering Research (IE), Instituto de Telecomunicações (PT), Uninova (PT), INESC TEC (PT), Universidade Nova de Lisboa (PT), Université Grenoble Alpes (FR), University of Chemistry and Technology, Prague (CZ)
Affordable and clean energy
Openalex Percentile: Top 16%
MXene and MAX Phase Materials
DOIOpen Access PDFOpenAlex
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