Ultrafast Terahertz Nanoplasmonic Platform for Subpicosecond Charge–Voltage Characterization in Metal–Insulator–Metal Nanogaps

We construct a platform for probing capacitive phenomena with subpicosecond (subps) temporal resolution, utilizing terahertz (THz) nanoplasmonics. The system employs metal nanoslits that function as parallel nanocapacitor structures, integrated with THz time-domain spectroscopy. By analyzing both incident and transmitted THz pulses, we directly correlate the ultrafast current induced within the nanogap structure with the resulting charge accumulation and voltage drop, revealing an effective capacitive response. This enables the direct extraction of charge–voltage ( Q–V ) characteristics of nanometer-thick dielectric layers, demonstrated here using aluminum oxide (Al 2 O 3 ). Our approach establishes a versatile methodology for subps time-resolved characterization of dielectric responses in nanostructures, opening pathways for studying ultrafast electronic dynamics and emergent phenomena in quantum materials.

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Publication Details

Journal
ACS Photonics
Published
2026-06-29
DOI
https://doi.org/10.1021/acsphotonics.6c01359
Primary Topic
Plasmonic and Surface Plasmon Research
Type
article
Field-Weighted Citation Impact
0.00

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article

Ultrafast Terahertz Nanoplasmonic Platform for Subpicosecond Charge–Voltage Characterization in Metal–Insulator–Metal Nanogaps

Hajung Park, Hyeong‐Ryeol Park, Young‐Mi Bahk, Seonhye Eom et al.
ACS Photonics
Plasmonic and Surface Plasmon Research
article

Ultrafast Terahertz Nanoplasmonic Platform for Subpicosecond Charge–Voltage Characterization in Metal–Insulator–Metal Nanogaps

Hajung Park, Hyeong‐Ryeol Park, Young‐Mi Bahk, Seonhye Eom, Sung Ju Hong, Euncheol Song
article en

Abstract

We construct a platform for probing capacitive phenomena with subpicosecond (subps) temporal resolution, utilizing terahertz (THz) nanoplasmonics. The system employs metal nanoslits that function as parallel nanocapacitor structures, integrated with THz time-domain spectroscopy. By analyzing both incident and transmitted THz pulses, we directly correlate the ultrafast current induced within the nanogap structure with the resulting charge accumulation and voltage drop, revealing an effective capacitive response. This enables the direct extraction of charge–voltage ( Q–V ) characteristics of nanometer-thick dielectric layers, demonstrated here using aluminum oxide (Al 2 O 3 ). Our approach establishes a versatile methodology for subps time-resolved characterization of dielectric responses in nanostructures, opening pathways for studying ultrafast electronic dynamics and emergent phenomena in quantum materials.

ACS Photonics
Incheon National University (KR), Kangwon National University (KR), Ulsan National Institute of Science and Technology (KR)
Ulsan National Institute of Science and Technology, National Research Foundation of Korea
Affordable and clean energy
Openalex Percentile: Top 13%
Plasmonic and Surface Plasmon Research
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